IXFB52N90P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 52A Ω 160mΩ 300ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 52 A IDM TC = 25°C, Pulse Width Limited by TJM 104 A IA TC = 25°C 26 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1250 W -55 ... +150 °C Features 150 °C z TJ TJM Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C FC Mounting Force 30..120/6.7..27 N/lb. 10 g Weight G z z BVDSS VGS = 0V, ID = 3mA 900 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V 6.5 V z TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved Fast Intrinsic Diode Avalanche Rated Low Package Inductance Plus 264TM Package for Clip or Spring Mounting Space Savings High Power Density Applications z z z z ± 200 nA D = Drain TAB = Drain Advantages z Characteristic Values Min. Typ. Max. (TAB) S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor drives Robotics and Servo Controls 50 μA 4 mA 160 mΩ DS100064A(02/09) IXFB52N90P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5 • ID25, Note 1 RGi Characteristic Values Min. Typ. Max. 20 35 S Gate Input Resistance 1.56 Ω 19 nF VGS = 0V, VDS = 25V, f = 1MHz 1180 pF 24 pF Ciss Coss PLUS264TM (IXFB) Outline Crss td(on) Resistive Switching Times 63 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 80 ns td(off) RG = 1Ω (External) 95 ns 42 ns 308 nC 117 nC 132 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.10 RthCS 0.13 Source-Drain Diode TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM °C/W °C/W Characteristic Values Min. Typ. Max. 52 A Repetitive, Pulse Width Limited by TJM 208 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 26A, -di/dt = 100A/μs VR = 100V 1.8 μC 26 A Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB52N90P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 55 110 VGS = 10V 9V 45 90 40 80 35 70 30 25 8V 20 VGS = 10V 100 ID - Amperes ID - Amperes 50 15 9V 60 50 40 8V 30 10 20 7V 5 7V 10 0 0 0 1 2 3 4 5 6 7 8 9 0 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 55 3.0 VGS = 10V 9V 50 2.8 VGS = 10V 2.6 45 2.4 35 RDS(on) - Normalized 40 ID - Amperes 15 VDS - Volts VDS - Volts 8V 30 25 20 7V 15 2.2 I D = 52A 2.0 1.8 I D = 26A 1.6 1.4 1.2 1.0 10 0.8 6V 5 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 60 2.8 2.6 55 VGS = 10V 50 TJ = 125ºC 2.4 45 2.2 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 1.8 1.6 40 35 30 25 20 1.4 15 1.2 10 TJ = 25ºC 1.0 5 0.8 0 0 10 20 30 40 50 60 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 70 80 90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFB52N90P Fig. 7. Input Admittance Fig. 8. Transconductance 70 70 60 60 50 50 g f s - Siemens ID - Amperes TJ = - 40ºC TJ = 125ºC 25ºC - 40ºC 40 30 25ºC 40 125ºC 30 20 20 10 10 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 9.5 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 80 400 450 Fig. 10. Gate Charge 160 16 140 14 120 12 100 10 VDS = 450V I D = 26A VGS - Volts IS - Amperes 40 ID - Amperes 80 60 TJ = 125ºC 40 I G = 10mA 8 6 4 TJ = 25ºC 2 20 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 100 VSD - Volts 200 250 300 350 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 10,000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads 150 QG - NanoCoulombs 1,000 Coss 0.100 0.010 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_52N90P(97)10-24-08