Advance Technical Information IXFT30N50Q3 IXFH30N50Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 30A Ω ≤ 200mΩ TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 TC = 25°C 30 A IDM TC = 25°C, Pulse Width Limited by TJM 90 A IA TC = 25°C 30 A EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 690 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 4.0 6.0 g g TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-268 TO-247 TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2011 IXYS CORPORATION, All Rights Reserved z V 6.5 V ±100 nA 10 μA 500 μA 200 mΩ High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100338(05/11) IXFT30N50Q3 IXFH30N50Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 12 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss 20 S 3200 pF 435 pF 43 pF 0.17 Ω 14 ns VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr Gate Input Resistance Resistive Switching Times td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 tf RG = 2Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 14 ns 26 ns 9 ns 62 nC 21 nC 26 nC Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.18 °C/W RthJC RthCS TO-268 Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 30 A Repetitive, Pulse Width Limited by TJM 120 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 15A, -di/dt = 100A/μs VR = 100V, VGS = 0V 10.4 A 1.05 μC TO-247 Outline 1 2 ∅P 3 e Note Terminals: 1 - Gate 3 - Source 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT30N50Q3 IXFH30N50Q3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 30 VGS = 10V 9V 70 25 60 20 9V 50 8V ID - Amperes ID - Amperes VGS = 10V 15 40 30 8V 10 7V 20 5 7V 10 6V 6V 0 0 0 1 2 3 4 5 6 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 30 3.4 VGS = 10V 8V VGS = 10V 3.0 R DS(on) - Normalized 25 20 ID - Amperes 20 VDS - Volts VDS - Volts 7V 15 10 6V 2.6 I D = 30A 2.2 I D = 15A 1.8 1.4 1.0 5 0.6 5V 0 0.2 0 2 4 6 8 10 12 14 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 35 3.4 VGS = 10V 30 3.0 25 2.6 TJ = 125ºC ID - Amperes R DS(on) - Normalized -25 VDS - Volts 2.2 1.8 20 15 10 1.4 TJ = 25ºC 5 1.0 0 0.6 0 10 20 30 40 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 50 60 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT30N50Q3 IXFH30N50Q3 Fig. 8. Transconductance 45 40 40 35 35 30 30 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 45 25 20 TJ = 125ºC 15 TJ = - 40ºC 25ºC 25 125ºC 20 15 25ºC - 40ºC 10 10 5 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 5 10 15 20 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 30 35 40 45 50 Fig. 10. Gate Charge 100 16 VDS = 250V 14 I D = 15A 80 I G = 10mA 12 10 VGS - Volts IS - Amperes 25 ID - Amperes 60 40 8 6 TJ = 125ºC 4 TJ = 25ºC 20 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 10 20 VSD - Volts 30 40 50 Fig. 11. Capacitance 70 80 90 Fig. 12. Forward-Bias Safe Operating Area 10000 100 RDS(on) Limit 25µs Ciss 100µs 1000 10 ID - Amperes Capacitance - PicoFarads 60 QG - NanoCoulombs Coss 100 1 1ms TJ = 150ºC TC = 25ºC Single Pulse Crss f = 1 MHz 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT30N50Q3 IXFH30N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_30N50Q3(Q6)05-17-11