VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 17 N100 1000 V 34 A IXGH/IXGM 17 N100A 1000 V 34 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V Maximum Ratings VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 34 A I C90 TC = 90°C 17 A I CM TC = 25°C, 1 ms 68 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 82 Ω Clamped inductive load, L = 300 µH ICM = 34 @ 0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md IC25 Mounting torque (M3) 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g VCE(sat) 3.5 V 4.0 V TO-247 AD (IXGH) G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 l l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l BVCES IC = 3 mA, VGE = 0 V VGE(th) IC = 250 µA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC 1000 2.5 V 5 V l l l = IC90, VGE = 15 V TJ = 25°C TJ = 125°C 17N100 17N100A 250 1 µA mA ±100 nA 3.5 4.0 V V l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density l l © 1996 IXYS All rights reserved 91515E (3/96) IXGH 17N100 IXGH 17N100A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = I C90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 6 Cies 15 pF 175 pF Cres 40 pF Qg 100 120 nC 20 30 nC 60 90 nC Q ge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°°C 100 ns IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 VCES , RG = Roff = 82 Ω 200 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 500 1000 ns 17N100 17N100A 750 450 750 ns ns 17N100A 3 mJ 100 ns Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES , RG = Roff = 82 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 200 ns 2.5 mJ 700 1000 ns 17N100 17N100A 1200 750 2000 1000 ns ns 17N100 17N100A 8 6 mJ mJ 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-204AE Outline 0.83 K/W RthJC RthCK TO-247 AD Outline S 1500 Coes IXGM 17N100 IXGM 17N100A 0.25 K/W IXGH 17N100 and IXGH 17N100 A characteristic curves are located on the IXGH 17N100U1 and IXGH 17N100AU1 data sheets. 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025