HiPerFASTTM IGBT IXGH 24N60A VCES IC25 VCE(sat) tfi Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 48 A I C90 TC = 90°C 24 A I CM TC = 25°C, 1 ms 96 A SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 22 Ω Clamped inductive load, L = 100 µH ICM = 48 @ 0.8 VCES A PC TC = 25°C 150 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight 6 g 300 °C 600 V 48 A 2.7 V 275 ns TO-247 AD G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Features l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s = = = = l International standard package JEDEC TO-247 AD High frequency IGBT 2nd generation HDMOS TM process High current handling capability MOS Gate turn-on - drive simplicity Applications l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l l l l BVCES IC = 250 µA, VGE = 0 V 600 VGE(th) IC = 250 µA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V © 1997 IXYS All rights reserved TJ = 25°C TJ = 125°C V 5 AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies V 200 1 µA mA ±100 nA 2.7 V Advantages l l l Easy to mount with 1 screw (isolated mounting screw hole) Switching speed for high frequency applications High power density 92730I (3/97) IXGH 24N60A Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. I C = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 9 Cies Coes 13 S 1500 pF 135 pF 40 pF VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, T J = 25°°C IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = Roff = 10 Ω 90 120 nC 11 15 nC 30 40 nC 25 ns 15 ns 0.6 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased R G Inductive load, TJ = 125°°C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 VCES, RG = Roff = 10 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 200 ns 110 270 ns 1.5 mJ 25 ns 15 ns 0.8 mJ 250 ns 400 ns 2.3 mJ RthJC RthCK mJ 150 TO-247 AD Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector 0.83 K/W 0.25 K/W IXGH 24N60A characteristic curves are located on the IXGH 24N60AU1 data sheet. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025