IXYS IXGX320N60B3

Preliminary Technical Information
IXGK320N60B3
IXGX320N60B3
GenX3TM 600V
IGBTs
VCES = 600V
IC90 = 320A
VCE(sat) ≤ 1.6V
Medium-Speed Low-Vsat PT
IGBTs for 5-40 kHz Switching
TO-264 (IXGK)
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
IC90
ILRMS
ICM
TC = 25°C ( Chip Capability )
TC = 90°C
Terminal Current Limit
TC = 25°C, 1ms
500
320
160
1200
A
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 1Ω
Clamped Inductive Load
ICM = 320
VCE < VCES
A
V
PC
TC = 25°C
1700
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
260
°C
°C
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
10
6
g
g
G
C
E
Maximum Ratings
TJ
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
Md
FC
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
Weight
TO-264
PLUS247
Tab
PLUS247 (IXGX)
G
C
E
G = Gate
C = Collector
Tab
E
= Emitter
Tab = Collector
Features
z
z
z
Optimized for Low Conduction and
Switching Losses
High Current Capability
Square RBSOA
Advantages
z
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 1mA, VGE = 0V
600
VGE(th)
IC
= 4mA, VCE = VGE
3.0
ICES
VCE = VCES, VGE = 0V
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC
IC
= 100A, VGE = 15V, Note 1
= 320A
V
Applications
V
z
75 μA
z
2 mA
z
5.0
TJ = 125°C
±400 nA
1.4
2.0
1.6
V
V
z
z
z
z
z
© 2010 IXYS CORPORATION, All Rights Reserved
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100157A(05/10)
IXGK320N60B3
IXGX320N60B3
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
IC = 60A, VCE = 10V, Note 1
70
125
S
VCE = 25V, VGE = 0V, f = 1MHz
18
960
130
nF
pF
pF
IC = 320A, VGE = 15V, VCE = 0.5 • VCES
585
105
215
nC
nC
nC
44
ns
IC = 100A,VGE = 15V
66
2.7
ns
mJ
250
ns
VCE = 0.8 • VCES, RG = 1Ω
165
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Inductive Load, TJ = 25°C
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
TO-264 AA ( IXGK) Outline
3.5
mJ
40
67
3.5
330
265
5.4
ns
ns
mJ
ns
ns
mJ
0.15
0.073 °C/W
°C/W
Inductive Load, TJ = 125°C
IC = 100A,VGE = 15V
VCE = 0.8 • VCES, RG = 1Ω
RthJC
RthCS
ns
5.0
1 - Gate
2, 4 - Collector
3 - Emitter
Back Side
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247TM (IXGX) Outline
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
A
A1
A2
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
.045
.075
.115
C
D
E
e
L
L1
Q
R
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
Dim.
6,404,065 B1
6,534,343
6,583,505
1.40
2.13
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
.055
.084
.123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGK320N60B3
IXGX320N60B3
Fig. 2. Output Characteristics @ T J = 125ºC
Fig. 1. Output Characteristics @ T J = 25ºC
350
350
VGE = 15V
11V
9V
300
VGE = 15V
11V
9V
300
8V
8V
250
IC - Amperes
IC - Amperes
250
200
7V
150
7V
200
150
6V
100
100
6V
50
50
5V
5V
0
0
0
0.5
1
1.5
2
2.5
3
0
3.5
0.5
1
1.5
VCE - Volts
2
2.5
3
3.5
VCE - Volts
Fig. 3. Dependence of VCE(sat) on
Junction Temperature
Fig. 4. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
3.5
1.5
VGE = 15V
1.4
TJ = 25ºC
1.3
I
C
= 320A
1.2
1.1
I
C
VCE - Volts
VCE(sat) - Normalized
3.0
= 160A
1.0
2.5
I
C
= 320A
2.0
160A
0.9
1.5
0.8
I
C
= 80A
80A
0.7
1.0
-50
-25
0
25
50
75
100
125
150
5
6
7
8
9
10
11
12
13
14
15
VGE - Volts
TJ - Degrees Centigrade
Fig. 6. Transconductance
Fig. 5. Input Admittance
280
300
TJ = - 40ºC
240
TJ = 125ºC
25ºC
- 40ºC
200
25ºC
200
g f s - Siemens
IC - Amperes
250
150
100
125ºC
160
120
80
50
40
0
0
3.5
4.0
4.5
5.0
5.5
6.0
VGE - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
6.5
7.0
7.5
0
50
100
150
200
IC - Amperes
250
300
350
IXGK320N60B3
IXGX320N60B3
Fig. 8. Capacitance
Fig. 7. Gate Charge
16
100,000
I C = 320A
Capacitance - PicoFarads
I G = 10mA
12
VGE - Volts
f = 1 MHz
VCE = 300V
14
10
8
6
4
10,000
Cies
1,000
Coes
100
Cres
2
0
10
0
100
200
300
400
500
600
0
5
10
15
20
25
30
35
40
VCE - Volts
QG - NanoCoulombs
Fig. 10. Maximum Transient Thermal Impedance
Fig. 9. Reverse-Bias Safe Operating Area
350
0.1
300
Z(th)JC - ºC / W
IC - Amperes
250
200
150
0.01
100
TJ = 125ºC
50
0
100
RG = 1Ω
dv / dt < 10V / ns
150
200
250
300
350
400
450
500
550
600
650
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Second
0.1
1
IXGK320N60B3
IXGX320N60B3
Fig. 12. Inductive Switching
Energy Loss vs. Collector Current
Fig. 11. Inductive Switching
Energy Loss vs. Gate Resistance
Eoff
6
VCE = 480V
---
TJ = 125ºC , VGE = 15V
I
C
= 100A
7
7
Eoff
6
6
VCE = 480V
5
4
4
3
3
2
I C = 50A
1
0
1
2
3
4
5
6
7
8
9
4.5
----
Eon
3.5
5
3
TJ = 125ºC
4
2.5
3
2
2
2
1.5
1
1
0
0
TJ = 25ºC
50
10
55
60
65
----
RG = 1Ω , VGE = 15V
4.5
300
4
290
4
2.5
3
2
2
1.5
I C = 50A
1
1
0
45
55
65
75
85
95
t f i - Nanoseconds
3
35
105
115
tfi
0.5
125
900
270
800
260
700
I
250
600
I
240
400
220
300
420
300
400
280
380
260
360
240
340
TJ = 125ºC
320
200
300
175
280
150
TJ = 25ºC
100
55
60
65
70
75
80
500
200
2
3
4
5
6
7
8
9
10
85
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
90
95
340
tfi
td(off) - - - -
330
RG = 1Ω , VGE = 15V
320
VCE = 480V
310
I
220
C
= 100A
300
200
290
180
280
160
260
140
240
120
220
100
100
270
I
C
= 50A
260
250
50
55
60
65
70
75
80
TJ - Degrees Centigrade
85
90
95
240
100
t d(off) - Nanoseconds
275
50
= 50A
230
1
t d(off) - Nanoseconds
t f i - Nanoseconds
VCE = 480V
125
C
210
t f i - Nanoseconds
RG = 1Ω , VGE = 15V
225
= 100A
Fig. 16. Inductive Turn-off
Switching Times vs. Junction Temperature
td(off) - - - -
250
C
RG - Ohms
350
300
1000
VCE = 480V
Fig. 15. Inductive Turn-off
Switching Times vs. Collector Current
tfi
0.5
100
td(off) - - - -
TJ - Degrees Centigrade
325
95
1100
280
3.5
I C = 100A
5
25
90
TJ = 125ºC, VGE = 15V
Eon - MilliJoules
Eoff - MilliJoules
VCE = 480V
85
t d(off) - Nanoseconds
6
80
Fig. 14. Inductive Turn-off
Switching Times vs. Gate Resistance
8
Eon
75
IC - Amperes
Fig. 13. Inductive Switching
Energy Loss vs. Junction Temperature
Eoff
1
70
RG - Ohms
7
4
RG = 1Ω , VGE = 15V
Eon - MilliJoules
5
8
Eoff - MilliJoules
Eon -
7
8
Eon - MilliJoules
Eoff - MilliJoules
8
IXGK320N60B3
IXGX320N60B3
Fig. 18. Inductive Turn-on
Switching Times vs. Collector Current
Fig. 17. Inductive Turn-on
Switching Times vs. Gate Resistance
140
100
td(on) - - - -
100
C = 100A
80
80
70
60
60
40
50
I
C
0
4
42
50
40
TJ = 125ºC
40
38
5
6
7
8
9
36
20
30
3
TJ = 25ºC
60
30
40
2
44
VCE = 480V
= 50A
20
1
td(on) - - - -
RG = 1Ω , VGE = 15V
t d(on) - Nanoseconds
I
70
t d(on) - Nanoseconds
t r i - Nanoseconds
VCE = 480V
46
tri
90
TJ = 125ºC, VGE = 15V
t r i - Nanoseconds
tri
120
80
50
10
55
60
65
70
75
80
85
90
95
34
100
IC - Amperes
RG - Ohms
Fig. 19. Inductive Turn-on
Switching Times vs. Junction Temperature
100
50
tri
90
80
48
46
VCE = 480V
70
44
I C = 100A
60
42
50
40
40
38
I
30
C
= 50A
t d(on) - Nanoseconds
t r i - Nanoseconds
td(on) - - - -
RG = 1Ω , VGE = 15V
36
20
34
10
25
35
45
55
65
75
85
95
105
115
32
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_320N60B3(96)5-14-10