Preliminary Technical Information IXGK320N60B3 IXGX320N60B3 GenX3TM 600V IGBTs VCES = 600V IC90 = 320A VCE(sat) ≤ 1.6V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching TO-264 (IXGK) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC90 ILRMS ICM TC = 25°C ( Chip Capability ) TC = 90°C Terminal Current Limit TC = 25°C, 1ms 500 320 160 1200 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load ICM = 320 VCE < VCES A V PC TC = 25°C 1700 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g G C E Maximum Ratings TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 Tab PLUS247 (IXGX) G C E G = Gate C = Collector Tab E = Emitter Tab = Collector Features z z z Optimized for Low Conduction and Switching Losses High Current Capability Square RBSOA Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 1mA, VGE = 0V 600 VGE(th) IC = 4mA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC IC = 100A, VGE = 15V, Note 1 = 320A V Applications V z 75 μA z 2 mA z 5.0 TJ = 125°C ±400 nA 1.4 2.0 1.6 V V z z z z z © 2010 IXYS CORPORATION, All Rights Reserved High Power Density Low Gate Drive Requirement Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100157A(05/10) IXGK320N60B3 IXGX320N60B3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 1 70 125 S VCE = 25V, VGE = 0V, f = 1MHz 18 960 130 nF pF pF IC = 320A, VGE = 15V, VCE = 0.5 • VCES 585 105 215 nC nC nC 44 ns IC = 100A,VGE = 15V 66 2.7 ns mJ 250 ns VCE = 0.8 • VCES, RG = 1Ω 165 Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Inductive Load, TJ = 25°C Eoff td(on) tri Eon td(off) tfi Eoff TO-264 AA ( IXGK) Outline 3.5 mJ 40 67 3.5 330 265 5.4 ns ns mJ ns ns mJ 0.15 0.073 °C/W °C/W Inductive Load, TJ = 125°C IC = 100A,VGE = 15V VCE = 0.8 • VCES, RG = 1Ω RthJC RthCS ns 5.0 1 - Gate 2, 4 - Collector 3 - Emitter Back Side Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXGX) Outline Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Collector 3 - Emitter PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 A A1 A2 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 Inches Min. Max. .190 .205 .090 .100 .075 .085 b b1 b2 1.14 1.91 2.92 .045 .075 .115 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Dim. 6,404,065 B1 6,534,343 6,583,505 1.40 2.13 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 .055 .084 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK320N60B3 IXGX320N60B3 Fig. 2. Output Characteristics @ T J = 125ºC Fig. 1. Output Characteristics @ T J = 25ºC 350 350 VGE = 15V 11V 9V 300 VGE = 15V 11V 9V 300 8V 8V 250 IC - Amperes IC - Amperes 250 200 7V 150 7V 200 150 6V 100 100 6V 50 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 0.5 1 1.5 VCE - Volts 2 2.5 3 3.5 VCE - Volts Fig. 3. Dependence of VCE(sat) on Junction Temperature Fig. 4. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 3.5 1.5 VGE = 15V 1.4 TJ = 25ºC 1.3 I C = 320A 1.2 1.1 I C VCE - Volts VCE(sat) - Normalized 3.0 = 160A 1.0 2.5 I C = 320A 2.0 160A 0.9 1.5 0.8 I C = 80A 80A 0.7 1.0 -50 -25 0 25 50 75 100 125 150 5 6 7 8 9 10 11 12 13 14 15 VGE - Volts TJ - Degrees Centigrade Fig. 6. Transconductance Fig. 5. Input Admittance 280 300 TJ = - 40ºC 240 TJ = 125ºC 25ºC - 40ºC 200 25ºC 200 g f s - Siemens IC - Amperes 250 150 100 125ºC 160 120 80 50 40 0 0 3.5 4.0 4.5 5.0 5.5 6.0 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 6.5 7.0 7.5 0 50 100 150 200 IC - Amperes 250 300 350 IXGK320N60B3 IXGX320N60B3 Fig. 8. Capacitance Fig. 7. Gate Charge 16 100,000 I C = 320A Capacitance - PicoFarads I G = 10mA 12 VGE - Volts f = 1 MHz VCE = 300V 14 10 8 6 4 10,000 Cies 1,000 Coes 100 Cres 2 0 10 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 VCE - Volts QG - NanoCoulombs Fig. 10. Maximum Transient Thermal Impedance Fig. 9. Reverse-Bias Safe Operating Area 350 0.1 300 Z(th)JC - ºC / W IC - Amperes 250 200 150 0.01 100 TJ = 125ºC 50 0 100 RG = 1Ω dv / dt < 10V / ns 150 200 250 300 350 400 450 500 550 600 650 VCE - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Second 0.1 1 IXGK320N60B3 IXGX320N60B3 Fig. 12. Inductive Switching Energy Loss vs. Collector Current Fig. 11. Inductive Switching Energy Loss vs. Gate Resistance Eoff 6 VCE = 480V --- TJ = 125ºC , VGE = 15V I C = 100A 7 7 Eoff 6 6 VCE = 480V 5 4 4 3 3 2 I C = 50A 1 0 1 2 3 4 5 6 7 8 9 4.5 ---- Eon 3.5 5 3 TJ = 125ºC 4 2.5 3 2 2 2 1.5 1 1 0 0 TJ = 25ºC 50 10 55 60 65 ---- RG = 1Ω , VGE = 15V 4.5 300 4 290 4 2.5 3 2 2 1.5 I C = 50A 1 1 0 45 55 65 75 85 95 t f i - Nanoseconds 3 35 105 115 tfi 0.5 125 900 270 800 260 700 I 250 600 I 240 400 220 300 420 300 400 280 380 260 360 240 340 TJ = 125ºC 320 200 300 175 280 150 TJ = 25ºC 100 55 60 65 70 75 80 500 200 2 3 4 5 6 7 8 9 10 85 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 90 95 340 tfi td(off) - - - - 330 RG = 1Ω , VGE = 15V 320 VCE = 480V 310 I 220 C = 100A 300 200 290 180 280 160 260 140 240 120 220 100 100 270 I C = 50A 260 250 50 55 60 65 70 75 80 TJ - Degrees Centigrade 85 90 95 240 100 t d(off) - Nanoseconds 275 50 = 50A 230 1 t d(off) - Nanoseconds t f i - Nanoseconds VCE = 480V 125 C 210 t f i - Nanoseconds RG = 1Ω , VGE = 15V 225 = 100A Fig. 16. Inductive Turn-off Switching Times vs. Junction Temperature td(off) - - - - 250 C RG - Ohms 350 300 1000 VCE = 480V Fig. 15. Inductive Turn-off Switching Times vs. Collector Current tfi 0.5 100 td(off) - - - - TJ - Degrees Centigrade 325 95 1100 280 3.5 I C = 100A 5 25 90 TJ = 125ºC, VGE = 15V Eon - MilliJoules Eoff - MilliJoules VCE = 480V 85 t d(off) - Nanoseconds 6 80 Fig. 14. Inductive Turn-off Switching Times vs. Gate Resistance 8 Eon 75 IC - Amperes Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature Eoff 1 70 RG - Ohms 7 4 RG = 1Ω , VGE = 15V Eon - MilliJoules 5 8 Eoff - MilliJoules Eon - 7 8 Eon - MilliJoules Eoff - MilliJoules 8 IXGK320N60B3 IXGX320N60B3 Fig. 18. Inductive Turn-on Switching Times vs. Collector Current Fig. 17. Inductive Turn-on Switching Times vs. Gate Resistance 140 100 td(on) - - - - 100 C = 100A 80 80 70 60 60 40 50 I C 0 4 42 50 40 TJ = 125ºC 40 38 5 6 7 8 9 36 20 30 3 TJ = 25ºC 60 30 40 2 44 VCE = 480V = 50A 20 1 td(on) - - - - RG = 1Ω , VGE = 15V t d(on) - Nanoseconds I 70 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 480V 46 tri 90 TJ = 125ºC, VGE = 15V t r i - Nanoseconds tri 120 80 50 10 55 60 65 70 75 80 85 90 95 34 100 IC - Amperes RG - Ohms Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature 100 50 tri 90 80 48 46 VCE = 480V 70 44 I C = 100A 60 42 50 40 40 38 I 30 C = 50A t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 1Ω , VGE = 15V 36 20 34 10 25 35 45 55 65 75 85 95 105 115 32 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_320N60B3(96)5-14-10