IXYS IXGH85N30C3

Preliminary Technical Information
GenX3TM 300V IGBT
VCES
IC110
VCE(sat)
tfi typ
IXGH85N30C3
High Speed PT IGBTs for
50-150kHz switching
Test Conditions
VCES
TJ = 25°C to 150°C
300
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
300
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
75
A
IC110
TC = 110°C (chip capability)
85
A
ICM
TC = 25°C, 1ms
420
A
IA
TC = 25°C
85
A
EAS
TC = 25°C
400
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 3.3Ω
Clamped inductive load @ ≤ 300V
ICM = 170
A
PC
TC = 25°C
Maximum Ratings
G
z
333
W
z
z
-55 ... +150
°C
150
°C
Tstg
-55 ... +150
°C
300
260
°C
°C
Md
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
6
g
Weight
z
z
z
z
z
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = VCES
VGE = 0V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
= 250µA, VGE = 0V
= 250µA, VCE = VGE
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
300
2.5
TJ = 125°C
= 85A, VGE = 15V
TJ = 125°C
© 2007 IXYS CORPORATION, All rights reserved
1.64
1.67
5.0
V
V
30
750
µA
µA
±100
nA
1.9
V
V
(TAB)
C = Collector,
TAB = Collector
High Frequency IGBT
Square RBSOA
High avalanche capability
Drive simplicity with MOS Gate
Turn-On
High current handling capability
Applications
z
Symbol
E
Features
z
TJM
C
G = Gate,
E = Emitter,
z
TL
TSOLD
300V
85A
1.9V
70ns
TO-247 AD
(IXGH)
Symbol
TJ
=
=
≤
=
z
PFC Circuits
PDP Systems
Switched-mode and resonant-mode
converters and inverters
SMPS
AC motor speed control
DC servo and robot drives
DC choppers
DS99883A(01-08)
IXGH85N30C3
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
IC
Min.
= 0.5 • IC110, VCE = 10V,
Characteristic Values
Typ.
Max.
35
60
S
5100
pF
310
pF
80
pF
136
nC
22
nC
TO-247 AD Outline
Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%.
∅P
Cies
Coes
VCE = 25V, VGE = 0V, f = 1MHz
Cres
Qg
Qge
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
Qgc
48
nC
td(on)
25
ns
34
ns
tri
Eon
td(off)
tfi
Inductive Load, TJ = 25°°C
0.20
IC = 0.5 • IC110, VGE = 15V
VCE = 200V, RG = 3.3Ω
0.39
td(on)
22
Eon
td(off)
tfi
160
ns
70
Eoff
tri
mJ
100
Inductive Load, TJ = 125°°C
IC = 0.5 • IC110, VGE = 15V
VCE = 200V, RG = 3.3Ω
Eoff
ns
0.75
mJ
ns
33
ns
0.36
mJ
120
ns
101
ns
0.48
mJ
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
0.375 °C/W
RthJC
RthCK
0.21
°C/W
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH85N30C3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
180
350
VGE = 15V
13V
11V
160
VGE = 15V
13V
11V
300
250
9V
120
IC - Amperes
IC - Amperes
140
100
80
7V
60
200
9V
150
100
40
7V
50
20
5V
5V
0
0
0
0.4
0.8
1.2
1.6
2
2.4
0
1
2
3
4
Fig. 3. Output Characteristics
@ 125ºC
7
8
9
10
1.5
VGE = 15V
13V
11V
160
VGE = 15V
1.4
VCE(sat) - Normalized
140
IC - Amperes
6
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
180
9V
120
100
80
7V
60
I
C
= 170A
I
C
= 85A
I
C
= 43A
1.3
1.2
1.1
1.0
0.9
40
20
0.8
5V
0
0.7
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50
-25
0
VCE - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
180
5.0
TJ = 25ºC
4.5
160
140
4.0
3.5
C
= 170A
85A
43A
IC - Amperes
I
VCE - Volts
5
VCE - Volts
VCE - Volts
3.0
2.5
120
TJ = - 40ºC
25ºC
125ºC
100
80
60
2.0
40
1.5
20
1.0
0
6
7
8
9
10
11
12
VGE - Volts
© 2007 IXYS CORPORATION, All rights reserved
13
14
15
3.5
4
4.5
5
5.5
6
VGE - Volts
6.5
7
7.5
8
IXGH85N30C3
Fig. 7. Transconductance
Fig. 8. Gate Charge
100
16
90
80
TJ = - 40ºC
25ºC
125ºC
I C = 85A
I G = 10 mA
12
VGE - Volts
70
g f s - Siemens
VCE = 150V
14
60
50
40
10
8
6
30
4
20
2
10
0
0
0
20
40
60
80
100
120
140
160
180
0
20
IC - Amperes
40
60
80
100
120
140
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
180
10,000
140
1,000
IC - Amperes
Capacitance - PicoFarads
160
Cies
Coes
120
100
80
60
100
TJ = 125ºC
40
Cres
RG = 3.3Ω
dV / dT < 10V / ns
20
f = 1 MHz
0
10
0
5
10
15
20
25
30
35
40
50
100
VCE - Volts
150
200
250
300
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
0.1
1
10
IXGH85N30C3
Fig. 13. Inductive Swiching
Energy Loss vs. Collector Current
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
1.3
2.4
Eoff
2.2
TJ = 125ºC , VGE = 15V
2.0
VCE = 200V
--1.1
C
0.9
1.2
1.0
0.5
- MilliJoules
0.7
1.4
Eoff
1.6
RG = 3.3Ω , VGE = 15V
Eon
0.9
----
0.8
VCE = 200V
1.4
0.7
1.2
0.6
TJ = 125ºC
1.0
0.5
TJ = 25ºC
0.8
0.4
0.6
0.3
0.4
0.2
0.2
0.1
- MilliJoules
on
1.6
1.8
on
1.8
= 85A
1.0
E
I
Eoff - MilliJoules
Eon -
2.0
E
Eoff - MilliJoules
2.6
0.8
0.6
0.3
I C = 42.5A
0.4
0.2
0.0
0.1
2
4
6
8
10
12
14
16
0.0
20
18
30
40
RG - Ohms
50
60
70
80
90
IC - Amperes
Fig. 14. Inductive Swiching
Energy Loss vs. Junction Temperature
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
2.0
160
1.0
1.8
380
0.9
150
I C = 85A
0.7
----
0.6
RG = 3.3Ω , VGE = 15V
1.0
0.5
VCE = 200V
0.8
0.4
0.6
0.3
0.4
0.2
I C = 42.5A
35
45
140
300
td(off) - - - TJ = 125ºC, VGE = 15V
VCE = 200V
tf
130
I
C
= 42.5A
220
110
180
100
140
55
65
75
85
95
105
115
0.0
125
90
100
2
4
6
8
12
14
16
18
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
170
130
180
td(off) - - - -
tf
10
RG - Ohms
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
125
170
125
RG = 3.3Ω , VGE = 15V
115
90
110
70
105
TJ = 25ºC
50
100
30
95
150
t f - Nanoseconds
110
120
RG = 3.3Ω , VGE = 15V
VCE = 200V
140
115
130
120
110
I C = 85A
110
I
C
= 42.5A
100
105
90
80
100
70
15
25
35
45
55
65
IC - Amperes
© 2007 IXYS CORPORATION, All rights reserved
75
85
60
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105
115
95
125
t d(off) - Nanoseconds
120
TJ = 125ºC
t d(off) - Nanoseconds
130
td(off) - - - -
tf
160
VCE = 200V
t f - Nanoseconds
260
120
TJ - Degrees Centigrade
150
C
= 85A
0.1
0.0
25
- MilliJoules
1.2
Eon
on
Eoff
t f - Nanoseconds
I
t d(off) - Nanoseconds
1.4
0.2
340
0.8
E
Eoff - MilliJoules
1.6
IXGH85N30C3
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
110
tr
100
TJ = 125ºC, VGE = 15V
td(on) - - - -
34
45
= 85A
35
60
50
40
30
I
30
C
= 42.5A
20
28
50
26
40
24
30
22
TJ = 125ºC
20
0
20
2
4
6
8
10
12
14
16
30
60
25
10
TJ = 25ºC
VCE = 200V
70
20
10
18
18
20
RG - Ohms
t d(on) - Nanoseconds
70
t d(on) - Nanoseconds
40
80
32
RG = 3.3Ω , VGE = 15V
t r - Nanoseconds
C
td(on) - - - -
tr
80
I
VCE = 200V
90
t r - Nanoseconds
90
50
120
25
30
35
40
45
50
55
60
65
70
75
80
85
IC - Amperes
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
80
32
75
31
I C = 85A
70
RG = 3.3Ω , VGE = 15V
60
30
29
28
VCE = 200V
55
27
50
26
45
25
40
24
35
23
30
I
C
t d(on) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
tr
65
22
= 42.5A
25
21
20
25
35
45
55
65
75
85
95
105
115
20
125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_85N30C3(65)08-21-07