Preliminary Technical Information GenX3TM 300V IGBT VCES IC110 VCE(sat) tfi typ IXGH85N30C3 High Speed PT IGBTs for 50-150kHz switching Test Conditions VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C (chip capability) 85 A ICM TC = 25°C, 1ms 420 A IA TC = 25°C 85 A EAS TC = 25°C 400 mJ SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 3.3Ω Clamped inductive load @ ≤ 300V ICM = 170 A PC TC = 25°C Maximum Ratings G z 333 W z z -55 ... +150 °C 150 °C Tstg -55 ... +150 °C 300 260 °C °C Md Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Mounting torque (TO-247) 1.13/10 Nm/lb.in. 6 g Weight z z z z z Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 250µA, VGE = 0V = 250µA, VCE = VGE IGES VCE = 0V, VGE = ±20V VCE(sat) IC 300 2.5 TJ = 125°C = 85A, VGE = 15V TJ = 125°C © 2007 IXYS CORPORATION, All rights reserved 1.64 1.67 5.0 V V 30 750 µA µA ±100 nA 1.9 V V (TAB) C = Collector, TAB = Collector High Frequency IGBT Square RBSOA High avalanche capability Drive simplicity with MOS Gate Turn-On High current handling capability Applications z Symbol E Features z TJM C G = Gate, E = Emitter, z TL TSOLD 300V 85A 1.9V 70ns TO-247 AD (IXGH) Symbol TJ = = ≤ = z PFC Circuits PDP Systems Switched-mode and resonant-mode converters and inverters SMPS AC motor speed control DC servo and robot drives DC choppers DS99883A(01-08) IXGH85N30C3 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs IC Min. = 0.5 • IC110, VCE = 10V, Characteristic Values Typ. Max. 35 60 S 5100 pF 310 pF 80 pF 136 nC 22 nC TO-247 AD Outline Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%. ∅P Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES Qgc 48 nC td(on) 25 ns 34 ns tri Eon td(off) tfi Inductive Load, TJ = 25°°C 0.20 IC = 0.5 • IC110, VGE = 15V VCE = 200V, RG = 3.3Ω 0.39 td(on) 22 Eon td(off) tfi 160 ns 70 Eoff tri mJ 100 Inductive Load, TJ = 125°°C IC = 0.5 • IC110, VGE = 15V VCE = 200V, RG = 3.3Ω Eoff ns 0.75 mJ ns 33 ns 0.36 mJ 120 ns 101 ns 0.48 mJ e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.375 °C/W RthJC RthCK 0.21 °C/W PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH85N30C3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 180 350 VGE = 15V 13V 11V 160 VGE = 15V 13V 11V 300 250 9V 120 IC - Amperes IC - Amperes 140 100 80 7V 60 200 9V 150 100 40 7V 50 20 5V 5V 0 0 0 0.4 0.8 1.2 1.6 2 2.4 0 1 2 3 4 Fig. 3. Output Characteristics @ 125ºC 7 8 9 10 1.5 VGE = 15V 13V 11V 160 VGE = 15V 1.4 VCE(sat) - Normalized 140 IC - Amperes 6 Fig. 4. Dependence of VCE(sat) on Junction Temperature 180 9V 120 100 80 7V 60 I C = 170A I C = 85A I C = 43A 1.3 1.2 1.1 1.0 0.9 40 20 0.8 5V 0 0.7 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 -25 0 VCE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 5.0 TJ = 25ºC 4.5 160 140 4.0 3.5 C = 170A 85A 43A IC - Amperes I VCE - Volts 5 VCE - Volts VCE - Volts 3.0 2.5 120 TJ = - 40ºC 25ºC 125ºC 100 80 60 2.0 40 1.5 20 1.0 0 6 7 8 9 10 11 12 VGE - Volts © 2007 IXYS CORPORATION, All rights reserved 13 14 15 3.5 4 4.5 5 5.5 6 VGE - Volts 6.5 7 7.5 8 IXGH85N30C3 Fig. 7. Transconductance Fig. 8. Gate Charge 100 16 90 80 TJ = - 40ºC 25ºC 125ºC I C = 85A I G = 10 mA 12 VGE - Volts 70 g f s - Siemens VCE = 150V 14 60 50 40 10 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 20 IC - Amperes 40 60 80 100 120 140 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 180 10,000 140 1,000 IC - Amperes Capacitance - PicoFarads 160 Cies Coes 120 100 80 60 100 TJ = 125ºC 40 Cres RG = 3.3Ω dV / dT < 10V / ns 20 f = 1 MHz 0 10 0 5 10 15 20 25 30 35 40 50 100 VCE - Volts 150 200 250 300 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGH85N30C3 Fig. 13. Inductive Swiching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 1.3 2.4 Eoff 2.2 TJ = 125ºC , VGE = 15V 2.0 VCE = 200V --1.1 C 0.9 1.2 1.0 0.5 - MilliJoules 0.7 1.4 Eoff 1.6 RG = 3.3Ω , VGE = 15V Eon 0.9 ---- 0.8 VCE = 200V 1.4 0.7 1.2 0.6 TJ = 125ºC 1.0 0.5 TJ = 25ºC 0.8 0.4 0.6 0.3 0.4 0.2 0.2 0.1 - MilliJoules on 1.6 1.8 on 1.8 = 85A 1.0 E I Eoff - MilliJoules Eon - 2.0 E Eoff - MilliJoules 2.6 0.8 0.6 0.3 I C = 42.5A 0.4 0.2 0.0 0.1 2 4 6 8 10 12 14 16 0.0 20 18 30 40 RG - Ohms 50 60 70 80 90 IC - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.0 160 1.0 1.8 380 0.9 150 I C = 85A 0.7 ---- 0.6 RG = 3.3Ω , VGE = 15V 1.0 0.5 VCE = 200V 0.8 0.4 0.6 0.3 0.4 0.2 I C = 42.5A 35 45 140 300 td(off) - - - TJ = 125ºC, VGE = 15V VCE = 200V tf 130 I C = 42.5A 220 110 180 100 140 55 65 75 85 95 105 115 0.0 125 90 100 2 4 6 8 12 14 16 18 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 170 130 180 td(off) - - - - tf 10 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 125 170 125 RG = 3.3Ω , VGE = 15V 115 90 110 70 105 TJ = 25ºC 50 100 30 95 150 t f - Nanoseconds 110 120 RG = 3.3Ω , VGE = 15V VCE = 200V 140 115 130 120 110 I C = 85A 110 I C = 42.5A 100 105 90 80 100 70 15 25 35 45 55 65 IC - Amperes © 2007 IXYS CORPORATION, All rights reserved 75 85 60 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 95 125 t d(off) - Nanoseconds 120 TJ = 125ºC t d(off) - Nanoseconds 130 td(off) - - - - tf 160 VCE = 200V t f - Nanoseconds 260 120 TJ - Degrees Centigrade 150 C = 85A 0.1 0.0 25 - MilliJoules 1.2 Eon on Eoff t f - Nanoseconds I t d(off) - Nanoseconds 1.4 0.2 340 0.8 E Eoff - MilliJoules 1.6 IXGH85N30C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 110 tr 100 TJ = 125ºC, VGE = 15V td(on) - - - - 34 45 = 85A 35 60 50 40 30 I 30 C = 42.5A 20 28 50 26 40 24 30 22 TJ = 125ºC 20 0 20 2 4 6 8 10 12 14 16 30 60 25 10 TJ = 25ºC VCE = 200V 70 20 10 18 18 20 RG - Ohms t d(on) - Nanoseconds 70 t d(on) - Nanoseconds 40 80 32 RG = 3.3Ω , VGE = 15V t r - Nanoseconds C td(on) - - - - tr 80 I VCE = 200V 90 t r - Nanoseconds 90 50 120 25 30 35 40 45 50 55 60 65 70 75 80 85 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 32 75 31 I C = 85A 70 RG = 3.3Ω , VGE = 15V 60 30 29 28 VCE = 200V 55 27 50 26 45 25 40 24 35 23 30 I C t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - tr 65 22 = 42.5A 25 21 20 25 35 45 55 65 75 85 95 105 115 20 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_85N30C3(65)08-21-07