IXYS IXGP50N60B4

Preliminary Technical Information
High-Gain IGBTs
IXGA50N60B4
IXGP50N60B4
IXGH50N60B4
VCES = 600V
IC110 = 36A
VCE(sat) ≤ 1.80V
Low-Vsat PT Trench IGBT
TO-263 AA (IXGA)
G
E
C (Tab)
TO-220AB (IXGP)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
100
36
230
A
A
A
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped Inductive Load
ICM = 72
VCE ≤ VCES
A
PC
TC = 25°C
290
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
S = Emitter
300
260
°C
°C
Features
10..65 / 2.2..14.6
1.13 / 10
N/lb.
Nm/lb.in.
2.5
3.0
6.0
g
g
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
Weight
TO-263
TO-220
TO-247
G
CE
C (Tab)
TO-247 (IXGH)
G
z
z
z
C
C (Tab)
E
D
= Collector
Tab = Collector
Optimized for Low Conduction and
Switching Losses
International Standard Packages
Square RBSOA
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250μA, VGE = 0V
600
VGE(th)
IC
= 250μA, VCE = VGE
4.0
ICES
VCE = VCES, VGE = 0V
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 36A, VGE = 15V, Note 1
TJ = 125°C
z
6.5
V
25 μA
1 mA
1.43
1.40
±100
nA
1.80
V
V
Applications
z
z
z
z
z
z
z
© 2011 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
V
TJ = 125°C
IGES
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Lamp Ballasts
DS100319A(04/11)
IXGA50N60B4 IXGP50N60B4
IXGH50N60B4
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCS
Notes:
Characteristic Values
Min.
Typ.
Max.
IC = IC110, VCE = 10V, Note 1
20
VCE = 25V, VGE = 0V, f = 1MHz
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
Inductive Load, TJ = 25°C
IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
Inductive Load, TJ = 125°C
IC = 36A, VGE = 15V
VCE = 400V, RG = 10Ω
Note 2
TO-247
TO-220
TO-263 Outline
30
S
1860
105
60
pF
pF
pF
110
nC
13
nC
43
nC
37
68
0.93
330
80
1.00
ns
ns
mJ
ns
ns
mJ
1.80
31
45
0.94
280
220
1.90
ns
ns
mJ
ns
ns
mJ
0.21
0.50
0.43 °C/W
°C/W
°C/W
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
TO-220 Outline
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Dim.
TO-247 Outline
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1 = Gate
2 = Collector
Pins: 1 - Gate
3 = Emitter
2 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGA50N60B4 IXGP50N60B4
IXGH50N60B4
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
350
72
VGE = 15V
13V
11V
10V
64
VGE = 15V
300
14V
13V
250
8V
48
12V
IC - Amperes
IC - Amperes
56
9V
40
32
7V
24
200
11V
150
10V
9V
100
16
8V
50
8
6V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
7V
6V
0
2.2
2.4
0
5
10
20
25
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
1.4
72
VGE = 15V
13V
11V
10V
56
VGE = 15V
1.3
VCE(sat) - Normalized
64
IC - Amperes
15
9V
48
40
8V
32
24
7V
1.2
I
C
= 72A
I
C
= 36A
I
C
= 18A
1.1
1.0
0.9
16
6V
0.8
8
5V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0.7
-50
2.4
-25
0
25
VCE - Volts
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
4.5
120
TJ = 25ºC
4.0
TJ = - 40ºC
25ºC
125ºC
100
3.0
I
C
IC - Amperes
VCE - Volts
3.5
= 72A
2.5
80
60
40
2.0
36A
20
1.5
18A
1.0
0
6
7
8
9
10
11
12
VGE - Volts
© 2011 IXYS CORPORATION, All Rights Reserved
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VGE - Volts
7.5
8.0
8.5
9.0
9.5
IXGA50N60B4 IXGP50N60B4
IXGH50N60B4
Fig. 8. Gate Charge
Fig. 7. Transconductance
50
16
45
VCE = 300V
14
TJ = - 40ºC
I C = 36A
40
30
VGE - Volts
g f s - Siemens
12
25ºC
35
125ºC
25
I G = 10mA
20
10
8
6
15
4
10
2
5
0
0
0
20
40
60
80
100
0
120
20
40
60
80
100
120
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
120
10,000
f = 1 MHz
Cies
1,000
80
IC - Amperes
Capacitance - PicoFarads
100
Coes
60
40
100
TJ = 125ºC
Cres
20
10
0
5
10
15
20
25
30
35
40
0
100
RG = 10Ω
dv / dt < 10V / ns
150
200
250
VCE - Volts
300
350
400
450
500
550
600
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
IXGA50N60B4 IXGP50N60B4
IXGH50N60B4
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
6.5
Eon -
---
3.6
TJ = 125ºC , VGE = 15V
5.5
I C = 72A
2
3.5
1.6
I
C
1.2
= 36A
2.5
0.8
2.0
0.4
1.5
15
20
25
30
----
3.5
VCE = 400V
3
3
2.5
2.5
TJ = 125ºC, 25ºC
2
1.5
1
0.5
0.5
0
0
15
35
20
25
30
35
2.0
I C = 72A
2.0
1.5
1.5
I C = 36A
0.0
45
55
65
75
tfi
85
95
105
115
220
500
I
C
= 72A
200
400
I
160
200
320
390
280
360
100
15
20
250
330
300
TJ = 125ºC
150
270
100
240
TJ = 25ºC
0
30
35
40
45
50
25
30
35
55
60
IC - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
65
70
75
400
tfi
td(on) - - - -
370
RG = 10Ω , VGE = 15V
VCE = 400V
240
340
200
310
I C = 36A
160
280
I C = 72A
120
250
210
80
220
180
40
25
35
45
55
65
75
85
TJ - Degrees Centigrade
95
105
115
190
125
t d(off) - Nanoseconds
TJ = 25ºC
25
= 36A
300
420
t d(off) - Nanoseconds
t f i - Nanoseconds
td(off) - - - -
VCE = 400V
20
C
180
10
t f i - Nanoseconds
tfi
15
600
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
RG = 10Ω , VGE = 15V
50
700
RG - Ohms
400
200
td(off) - - - -
140
0.5
125
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
300
75
VCE = 400V
240
TJ - Degrees Centigrade
350
70
1.0
0.5
35
65
t d(off) - Nanoseconds
3.0
t f i - Nanoseconds
VCE = 400V
3.5
25
60
TJ = 125ºC, VGE = 15V
2.5
1.0
55
800
260
Eon - MilliJoules
Eoff - MilliJoules
----
RG = 10Ω , VGE = 15V
2.5
50
280
3.0
4.0
45
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
5.0
4.5
40
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Eon
2
1.5
RG - Ohms
Eoff
4
1
0
10
Eon
Eon - MilliJoules
4.0
Eon - MilliJoules
2.4
3.0
3.5
2.8
4.5
Eoff
RG = 10Ω , VGE = 15V
3.2
VCE = 400V
5.0
4.5
4
Eoff - MilliJoules
Eoff
6.0
Eoff - MilliJoules
4.5
4
IXGA50N60B4 IXGP50N60B4
IXGH50N60B4
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
160
td(on) - - - -
TJ = 125ºC, VGE = 15V
C
100
48
= 72A
80
42
60
36
40
I
C
= 36A
20
10
td(on) - - - -
50
RG = 10Ω , VGE = 15V
15
20
25
30
45
TJ = 25ºC
80
60
35
40
30
20
24
0
30
TJ = 125ºC
25
20
15
35
40
t d(on) - Nanoseconds
I
54
t d(on) - Nanoseconds
100
120
55
tri
VCE = 400V
VCE = 400V
120
60
t r i - Nanoseconds
tri
140
t r i - Nanoseconds
140
66
25
35
45
55
65
75
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
140
55
tri
td(on) - - - -
RG = 10Ω , VGE = 15V
120
50
100
45
80
I
C
= 72A
60
40
35
40
I C = 36A
20
25
35
45
55
65
75
85
95
105
115
t d(on) - Nanoseconds
t r i - Nanoseconds
VCE = 400V
30
25
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_50N60B4(L5)03-23-11