Preliminary Technical Information IXYK120N120C3 IXYX120N120C3 1200V XPTTM IGBTs GenX3TM VCES IC110 VCE(sat) tfi(typ) High-Speed IGBTs for 20-50 kHz Switching = = ≤ = 1200V 120A 3.5V 90ns TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ VGES VGEM 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC= 25°C (Chip Capability) Terminal Current Limit TC= 110°C TC = 25°C, 1ms 220 160 120 660 A A A A IA EAS TC = 25°C TC = 25°C 60 2 A J SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load ICM = 240 @VCE ≤ VCES A PC TC = 25°C 1500 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G C E PLUS247 (IXYX) G BVCES IC = 250μA, VGE = 0V 1200 VGE(th) IC = 500μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.0 25 μA 1.5 mA TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved V 2.9 3.8 ±100 nA 3.5 V V C E Tab E = Emitter Tab = Collector Features z z z z z z Optimized for Low Switching Losses Square RBSOA International Standard Packages Positive Thermal Coefficient of Vce(sat) Avalanche Rated High Current Handling Capability Advantages z Characteristic Values Min. Typ. Max. G G = Gate C = Collector z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab High Power Density Low Gate Drive Requirement Applications z z z z z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100451A(03/13) IXYK120N120C3 IXYX120N120C3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = IC110, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Note 2 Inductive load, TJ = 150°C IC = 100A, VGE = 15V VCE = 0.5 • VCES, RG = 1Ω Note 2 RthJC RthCS TO-264 Outline 68 S 9810 560 205 pF pF pF 430 nC 76 nC 200 nC 37 70 6.2 167 90 4.2 ns ns mJ ns ns mJ 7.0 37 62 10.0 200 120 5.3 ns ns mJ ns ns mJ 0.15 0.10 °C/W °C/W Terminals: 1 = Gate 2,4 = Collector 3 = Emitter PLUS247TM Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYK120N120C3 IXYX120N120C3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 240 VGE = 15V 12V 10V 200 10V 250 9V 9V 160 IC - Amperes IC - Amperes VGE = 15V 12V 300 8V 120 7V 80 200 150 8V 100 7V 40 50 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 2 4 6 8 14 16 18 20 22 2.2 240 VGE = 15V 12V 10V VGE = 15V 2.0 1.8 VCE(sat) - Normalized IC - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 200 10 VCE - Volts VCE - Volts 9V 160 8V 120 80 7V 40 6V 1.6 I C = 240A I C = 120A 1.4 1.2 1.0 0.8 I 0.6 5V C = 60A 0.4 0 0 1 2 3 4 5 6 -50 7 -25 0 VCE - Volts 25 50 75 100 125 150 175 7.5 8 8.5 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 200 9 TJ = 25ºC 8 180 160 7 I C IC - Amperes VCE - Volts 140 6 = 240A 5 4 120A 120 100 80 TJ = 150ºC 25ºC 60 3 - 40ºC 40 2 20 60A 1 0 6 7 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 13 14 15 4 4.5 5 5.5 6 6.5 VGE - Volts 7 IXYK120N120C3 IXYX120N120C3 Fig. 8. Gate Charge Fig. 7. Transconductance 120 16 TJ = - 40ºC I C = 120A I G = 10mA 12 25ºC 80 VGE - Volts g f s - Siemens VCE = 600V 14 100 150ºC 60 40 10 8 6 4 20 2 0 0 0 40 80 120 160 0 200 50 100 150 Fig. 9. Capacitance 250 300 350 400 450 Fig. 10. Reverse-Bias Safe Operating Area 280 100,000 f = 1 MHz Capacitance - PicoFarads 200 QG - NanoCoulombs IC - Amperes 240 200 IC - Amperes 10,000 Cies Coes 1,000 160 120 80 TJ = 150ºC 40 Cres 0 100 100 0 5 10 15 20 VCE - Volts 1 25 30 35 40 RG = 1Ω dv / dt < 10V / ns 300 500 Fig. 11. Maximum Transient Thermal Impedance 700 900 1100 1300 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance aaaaa 0.2 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXYK120N120C3 IXYX120N120C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 9 Eon - --- 12 TJ = 150ºC , VGE = 15V 7 13 Eoff 11 VCE = 600V 5 9 4 8 3 7 I 2 C = 50A 6 1 11 TJ = 150ºC 5 9 4 7 3 2 3 5 0 1 4 1 2 3 4 5 6 7 8 9 50 10 55 60 65 70 RG - Ohms 8 Eon ---- RG = 1Ω , VGE = 15V 800 tfi td(off) - - - - 10 160 600 140 500 6 3 2 1 50 75 100 125 I 120 C = 50A 400 I 2 80 200 0 150 60 100 1 2 3 4 5 tfi td(off) - - - - RG = 1Ω , VGE = 15V VCE = 600V 150 260 140 120 200 180 TJ = 25ºC 80 160 60 70 75 80 9 10 85 IC - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 90 95 140 100 tfi td(off) - - - - 260 RG = 1Ω , VGE = 15V I C = 50A VCE = 600V 240 120 220 110 200 I C = 100A 100 180 90 160 80 140 70 25 50 75 100 TJ - Degrees Centigrade 125 120 150 t d(off) - Nanoseconds 220 65 8 280 130 t d(off) - Nanoseconds t f i - Nanoseconds 280 240 TJ = 150ºC 60 7 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t f i - Nanoseconds 200 55 6 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 160 = 100A 300 TJ - Degrees Centigrade 180 C 100 4 I C = 50A 50 700 TJ = 150ºC, VGE = 15V t d(off) - Nanoseconds 4 Eon - MilliJoules 8 100 1 100 180 5 140 95 12 I C = 100A 25 90 VCE = 600V VCE = 600V 6 85 200 t f i - Nanoseconds Eoff 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 14 7 75 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff - MilliJoules 5 TJ = 25ºC Eon - MilliJoules 10 I C = 100A ---- VCE = 600V Eon - MilliJoules 6 Eon RG = 1Ω , VGE = 15V 6 Eoff - MilliJoules 8 Eoff - MilliJoules 7 13 Eoff IXYK120N120C3 IXYX120N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri td(on) - - - - TJ = 150ºC, VGE = 15V 80 72 80 64 70 I C 40 I C 20 0 1 2 3 4 5 6 7 8 9 tri 40 35 32 30 34 24 20 10 50 60 I C 65 70 75 80 85 90 95 33 100 42 40 38 = 100A 40 36 I C = 50A 20 34 0 75 60 100 t d(on) - Nanoseconds t r i - Nanoseconds VCE = 600V 50 55 td(on) - - - - RG = 1Ω , VGE = 15V 25 38 TJ = 150ºC, 25ºC IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 VCE = 600V 36 RG - Ohms 100 39 50 40 = 50A td(on) - - - - 37 48 = 100A tri RG = 1Ω , VGE = 15V 60 56 60 40 t d(on) - Nanoseconds VCE = 600V 100 90 t d(on) - Nanoseconds t r i - Nanoseconds 120 80 t r i - Nanoseconds 140 125 32 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_120N120C3(9P) 03-01-12