JMNIC 2SC2582

JMnic
Product Specification
2SC2582
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・Large collector power dissipation
・High transition frequency
APPLICATIONS
・Audio frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
45
V
VCEO
Collector- emitter voltage
35
V
VEBO
Emitter-base voltage
5
V
1
A
1.5
A
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Open collector
Ta=25℃
1.2
W
TC=25℃
10
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~+150
℃
JMnic
Product Specification
2SC2582
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=2mA ;IB=0
35
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
45
V
VCEsat
Collector-emitter saturation voltage
IC=500mA ;IB=50mA
0.5
V
ICEO
Collector cut-off current
VCE=20V; IB=0
100
μA
ICBO
Collector cut-off current
VCB=20V; IE=0
0.1
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=500mA ; VCE=10V
85
hFE-2
DC current gain
IC=1A ; VCE=5V
50
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IC=50mA ; VCE=10V
‹
CONDITIONS
hFE-1 Classifications
Q
R
S
85-170
120-240
170-340
2
MIN
TYP.
MAX
UNIT
340
20
200
pF
MHz
JMnic
Product Specification
2SC2582
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3