JMNIC 2SB1642

JMnic
Product Specification
2SB1642
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Low collector saturation voltage:
VCE(SAT)=-1.5V(Max) at IC=-2.5A,IB=-0.25A
・Collector power dissipation:
PC=25W(TC=25℃)
APPLICATIONS
・Audio frequency power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-4
A
IB
Base current
-1
A
PC
Collector power dissipation
Ta=25℃
2.0
TC=25℃
25
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1642
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2.5A; IB=-0.25A
-0.7
-1.5
V
VBE
Base-emitter voltage
IC=-0.5A;VCE=-5V
-0.75
-1.0
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-10
μA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
100
hFE-2
DC current gain
IC=-3A ; VCE=-5V
20
Transition frequency
IC=-0.5A ; VCE=-5V
9.0
MHz
Collector output capacitance
IE=0; f=1MHz;VCB=-10V
50
pF
fT
COB
CONDITIONS
2
MIN
TYP.
MAX
-60
UNIT
V
320
JMnic
Product Specification
2SB1642
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
2SB1642
Silicon PNP Power Transistors
4