JMNIC 2SA1185

JMnic
Product Specification
2SA1185
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PN package
・High current capability
・Low collector saturation voltage
APPLICATIONS
・High power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-7
A
ICM
Collector current-peak
-15
A
IBM
Base current-peak
-5
A
PC
Collector power dissipation
60
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1185
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-0.1A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-7A; IB=-0.7A
-0.8
V
VBE
Base-emitter on voltage
IC=-7A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-50V; IE=0
-1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
60
hFE-2
DC current gain
IC=-7A ; VCE=-5V
20
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
250
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V
100
MHz
‹
CONDITIONS
hFE-1 Classifications
Q
P
O
60-120
100-200
160-320
2
MIN
TYP.
MAX
-50
UNIT
V
320
JMnic
Product Specification
2SA1185
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3