Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed ・Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 6 A ICM Collector current-Peak 15 A IB Base current 4 A IBM Base current-Peak 8 A PD Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT TC=25℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance junction to case 1.25 ℃/W Rth j-A Thermal resistance junction to ambient 62.5 ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; L=25mH VCEsat-1 Collector-emitter saturation voltage IC=1.3A ;IB=0.13A TC=125℃ VCEsat-2 Collector-emitter saturation voltage MIN TYP. MAX 450 UNIT V 0.6 V 0.65 IC=3A ;IB=0.6A TC=125℃ 0.7 V 0.8 VBEsat-1 Emitter-base saturation voltage IC=1.3A; IB=0.13A 1.2 V VBEsat-2 Emitter-base saturation voltage IC=3A; IB=0.6A 1.3 V Collector cut-off current VCES=RatedVCES; VEB=0 ICES 0.1 0.5 TC=125℃ VCES=800V 0.1 mA ICEO Collector cut-off current VCE=RatedVCEO; IB=0 0.1 mA IEBO Emitter cut-off current VEB=9V; IC=0 0.1 mA hFE-1 DC current gain IC=0.5A ; VCE=5V 14 hFE-2 DC current gain IC=3A ; VCE=1V 6 hFE-3 DC current gain IC=1.3A ; VCE=1V 11 hFE-4 DC current gain IC=10mA ; VCE=5V 10 Transition frequency IC=0.5A ; VCE=10V;f=1.0MHz 14 MHz Collector outoput capacitance f=1MHz ; VCB=10V;f=1.0MHz 75 pF 90 ns fT COB 34 Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs ton Turn-on time toff Turn-off time ton Turn-on time toff Turn-off time VCC=300V ,IC=3A IB1=0.6A; IB2=1.5A VCC=300V ,IC=1.3A IB1=0.13A; IB2=0.65A JMnic 1.7 2.5 μs 0.2 0.3 μs 1.2 2.5 μs Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) JMnic