JMnic Product Specification 2SC4053 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage,High speed switching ・High reliability PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 2 A IBM Base current-peak 4 A PC Collector dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 2.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case JMnic Product Specification 2SC4053 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V ICBO Collector cut-off current At rated voltage 0.1 mA ICEO Collector cut-off current At rated voltage 0.1 mA IEBO Emitter cut-off current At rated voltage 0.1 mA hFE-1 DC current gain IC=2.5A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 5 Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS MIN TYP. MAX 450 UNIT V 20 MHz Switching times ton Turn-on time tstg Storage time tf IC=2.5A;IB1=0.5A; IB2=1A;RL=60Ω VBB2=4V Fall time 2 0.5 μs 2.0 μs 0.2 μs JMnic Product Specification 2SC4053 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3