Inchange Semiconductor Product Specification MJF18004 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220F package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 5 A ICM Collector current-Peak 10 A IB Base current 2 A IBM Base current-Peak 4 A PD Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ MAX UNIT TC=25℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance junction to case 3.12 ℃/W Rth j-A Thermal resistance junction to ambient 62.5 ℃/W Inchange Semiconductor Product Specification MJF18004 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage VCEsat-1 Collector-emitter saturation voltage VCEsat-2 Collector-emitter saturation voltage VCEsat-3 CONDITIONS IC=0.1A; L=25mH MIN TYP. MAX 450 UNIT V IC=1A ;IB=0.1A TC=125℃ IC=2A ;IB=0.4A TC=125℃ 0.5 0.6 V 0.45 0.8 V Collector-emitter saturation voltage IC=2.5A ;IB=0.5A 0.75 V VBEsat-1 Base-emitter saturation voltage IC=1A ;IB=0.1A 1.1 V VBEsat-2 Base-emitter saturation voltage IC=2A ;IB=0.4A 1.25 V VBEsat-3 Base-emitter saturation voltage IC=2.5A ;IB=0.5A 1.3 V ICES Collector cut-off current 0.1 VCES=RatedVCES; VEB=0 0.5 mA TC=125℃ VCES=800V 0.1 ICEO Collector cut-off current VCE=RatedVCEO; IB=0 0.1 mA IEBO Emitter cut-off current VEB=9V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2.5V 12 hFE-2 DC current gain IC=1A ; VCE=5V 14 hFE-3 DC current gain IC=2A ; VCE=1V 6 hFE-4 DC current gain IC=5mA ; VCE=5V 10 Transition frequency IC=0.5A ; VCE=10V;f=1.0MHz 13 MHz Collector outoput capacitance IE=0 ; VCB=10V;f=1.0MHz 45 pF fT COB 36 Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs ton Turn-on time ts Storage time tf Fall time VCC=250V ,IC=2.5A IB1=0.5A; IB2=0.5A 2 0.6 μs 3.0 μs 0.4 μs Inchange Semiconductor Product Specification MJF18004 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3