SavantIC Semiconductor Product Specification BUL381 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage capability ·Very high switching speed APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 5 A ICM Collector current-Peak (tp<5 ms) 8 A IB Base current 2 A IBM Base current-Peak (tp<5 ms) 4 A PT Total power dissipation 70 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.78 UNIT /W SavantIC Semiconductor Product Specification BUL381 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; L=25mH V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.2A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.7 V VCEsat-3 Collector-emitter saturation voltage IC=3A ;IB=0.8A 1.1 V VBEsat-1 Base-emitter saturation voltage IC=1A ;IB=0.2A 1.1 V VBEsat-2 Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V ICES Collector cut-off current VCE=800V VBE=0 Tj=125 100 500 µA ICEO Collector cut-off current VCE=400V; IB=0 250 µA hFE-1 DC current gain IC=2A ; VCE=5V 8 hFE-2 DC current gain IC=10mA ; VCE=5V 10 1 µs 2.2 µs 0.8 µs 400 UNIT V 9 Switching times resistive load ton Turn-on time ts Storage time tf Fall time VCC=250V ,IC=2A IB1=- IB2=0.4A tp=30µs 2 1.4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 BUL381