SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B FEATURE C A ・Complementary to MPS8050. N K MAXIMUM RATING (Ta=25℃) E G RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage -6 V IC -1.5 A L Collector Current VEBO H 625 PC* Collector Power Dissipation Junction Temperature Storage Temperature Range F F 1 2 3 C SYMBOL 1. EMITTER 2. BASE 3. COLLECTOR mW 400 Tj 150 ℃ Tstg -55～150 ℃ MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M CHARACTERISTIC J D DIM A B C D E F G H J K L M N TO-92 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-6V, IC=0 - - -100 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-100μ A, IE=0 -40 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-2mA, IB=0 -25 - - V VCE=-1V, IC=-5mA 45 170 - hFE(2) (Note) VCE=-1V, IC=-100mA 85 160 300 hFE(3) VCE=-1V, IC=-800mA 40 80 - Collector-Emitter Saturation Voltage VCE(sat) IC=-800mA, IB=-80mA - -0.28 -0.5 V Base-Emitter Saturation Voltage VBE(sat) IC=-800mA, IB=-80mA - -0.98 -1.2 V hFE(1) DC Current Gain Base-Emitter Voltage VBE VCE=-1V, IC=-10mA - -0.66 -1.0 V Transition Frequency fT VCE=-10V, IC=-50mA 100 200 - MHz - 15 - pF Collector Output Capacitance Note : hFE(2) Classification 2010. 6. 10 Cob VCB=-10V, f=1MHz, IE=0 B:85～160 , C : 120～200 , D : 160～300 Revision No : 3 1/2 MPS8550 I C - V CE h FE - I C 1000 VCE =-1V I B =-4.0mA -0.4 I B =-3.5mA DC CURRENT GAIN h FE COLLECTOR CURRENT IC (A) -0.5 I B =-3.0mA -0.3 I B =-2.5mA I B =-2.0mA I B =-1.5mA -0.2 I B =-1.0mA -0.1 0 I B =-0.5mA 0 -0.4 -0.8 -1.2 -1.6 100 10 0.1 -2.0 COLLECTOR-EMITTER VOLTAGE VCE (V) 1 SATURATION VOLTAGE V BE(sat), VCE(sat) (mV) COLLECTOR CURRENT I C (mA) 10000 VCE =-1V -50 -30 -10 -5 -3 -1 -0.5 -0.3 -0.2 -0.4 -0.6 -0.8 -1.0 VBE (sat) 100 VCE (sat) 10 1 10 COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 100 50 30 -3 -5 -10 -30 -50 -100 COLLECTOR CURRENT I C (mA) 2010. 6. 10 1000 10000 C ob - V CB V CE =-10V -1 100 COLLECTOR CURRENT IC (mA) f T - IC 10 10000 IC =10IB 1000 1 0.1 -1.2 BASE-EMITTER VOLTAGE VBE (V) 300 1000 V BE(sat), VCE(sat) - I C -100 0 100 COLLECTOR CURRENT I C (mA) I C - V BE -0.1 10 Revision No : 3 -300 100 f=1MHz I E =0 50 30 10 5 3 1 -1 -3 -5 -10 -30 -50 COLLECTOR-BASE VOLTAGE VCB (V) 2/2