SEMICONDUCTOR KTC4666 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. E FEATURE ・High hFE : hFE=600～3600. ・Noise Figure : 0.5dB(Typ.) at f=100kHz. B M M D J 3 1 G A 2 UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 8 V Collector Current IC 150 mA Base Current IB 30 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ H L RATING C SYMBOL Storage Temperature Range B C MILLIMETERS _ 0.20 2.00 + _ 0.15 1.25 + _ 0.10 0.90 + D E 0.3+0.10/-0.05 _ 0.20 2.10 + G H 0.65 0.15+0.1/-0.06 J K MAXIMUM RATING (Ta=25℃) CHARACTERISTIC DIM A N N K 1.30 0.00-0.10 0.70 _ 0.10 0.42 + L M N 0.10 MIN 1. EMITTER 2. BASE 3. COLLECTOR USM Marking * Package mounted on 99.5% alumina 10mm×8mm×0.6mm Lot No. h FE Rank T Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=8V, IC=0 - - 0.1 μA DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance hFE (1)(Note) VCE=6V, IC=2mA 600 - 3600 hFE (2) VCE=5V, IC=1mA 500 - 3600 hFE (3) VCE=10V, IC=2mA 600 - - VCE(sat)(1) IC=10mA, IB=1mA - 0.05 0.15 V VCE(sat)(2) IC=50mA, IB=5mA - 0.07 0.2 V VCE(sat(3) IC=100mA, IB=10mA - 0.12 0.25 V fT VCE=10V, IC=10mA 100 250 - MHz - 3.5 - pF - 0.5 - Cob NF (1) Noise Figure NF (2) Note : hFE Classification 2008. 8. 29 VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=100kHz, Rg=10kΩ VCE=6V, IC=0.1mA, f=1kHz, Rg=10kΩ dB - 0.3 - A:600～1800 , B:1200～3600 Revision No : 4 1/3 KTC4666 I C - V CE 400 200 120 5k 3k COMMON EMITTER Ta=25 C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 160 h FE - I C 100 80 80 60 50 40 30 20 I B =10µA 40 0 0 0 2 4 6 1k Ta=-25 C 500 300 100 50 30 10 8 Ta=100 C Ta=25 C COMMON EMITTER V CE =6V 0.1 COLLECTOR EMITTER VOLTAGE V CE (V) 0.3 1 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 30 0.5 0.3 0.1 0.05 0.03 Ta=100 C Ta=25 C Ta=-25 C 0.1 300 COMMON EMITTER I C /I B =10 Ta=25 C 10 5 3 1 0.5 0.3 0.3 1 3 10 30 100 300 0.1 COLLECTOR CURRENT I C (mA) 0.3 1 COMMON EMITTER VCE =6V Ta=-25 C 80 Ta=25 C Ta=100 C 120 40 0 0 0.4 0.8 10 30 100 300 fT - IE TRANSITION FREQUENCY f T (MHz) 160 3 COLLECTOR CURRENT I C (mA) I C - V BE COLLECTOR CURRENT I C (mA) 100 0.1 0.01 1.2 BASE EMITTER VOLTAGE V BE (V) 2008. 8. 29 30 VBE(sat) - I C COMMON EMITTER I C /I B =10 1 10 COLLECTOR CURRENT I C (mA) VCE(sat) - I C 3 3 Revision No : 4 1.6 5k 3k VCC =10V Ta=25 C 1k 500 300 100 50 30 10 -0.1 -0.3 -1 -3 -10 -30 -100 -300 EMITTER CURRENT I E (mA) 2/3 C ob - V CB COLLECTOR OUTPUT CAPACITANCE Cob (pF) 100 I E =0 f=1MHz Ta=25 C 50 30 10 5 3 1 0.1 0.3 1 3 10 30 COLLECTOR-BASE VOLTAGE VCB (V) 2008. 8. 29 Revision No : 4 100 CIOLLECTOR POWER DISSIPATION PC (mW) KTC4666 P C - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 3/3