KEC KTC3209_05

SEMICONDUCTOR
KTC3209
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
FEATURES
Low Collector Saturation Voltage
: VCE(sat)=0.5V(Max.) (IC=1A)
High Speed Switching Time : tstg=1.0 S(Typ.)
Complementary to KTA1281.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
2
A
Emitter Current
IE
-2
A
Collector Power Dissipation
PC
1
W
Junction Temperature
Tj
150
Tstg
-55 150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=50V, IE=0
-
-
0.1
A
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
-
-
0.1
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA, IB=0
50
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=100mA, IB=0
5
-
-
V
hFE (1) (Note)
VCE=2V, IC=0.5A (Note)
70
-
240
hFE (2) (Note)
VCE=2V, IC=1.5A
40
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=0.05A
-
-
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=0.05A
-
-
1.2
V
fT
VCE=2V, IC=0.5A
-
100
-
MHz
VCB=10V, IE=0, f=1MHz
-
30
-
pF
DC Current Gain
Transition Frequency
Cob
Collector Output Capacitance
Switching
Time
Turn-on Time
ton
-
0.1
-
Storage Time
tstg
-
1.0
-
Fall Time
tf
-
0.1
-
Note : hFE Classification 0:70
2005. 12. 2
140,
Y:120
Revision No : 1
S
240
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KTC3209
2005. 12. 2
Revision No : 1
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KTC3209
2005. 12. 2
Revision No : 1
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