KEC KTB1124

SEMICONDUCTOR
KTB1124
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTD1624.
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-60
V
Vollector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-3
A
Collector Current(Pulse)
ICP
-6
A
Base Current
IB
-600
mA
PC
500
mW
PC*
1
W
Tj
150
Collector Power Dissipation
Junction Temperature
Tstg
Storage Temperature Range
-55
* : Package mounted on ceramic substrate(250mm
2
150
0.8t)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
Collector Cut-off Current
ICBO
VCB=-40V, IE=0
-
-
-1
Emitter Cut-off Current
IEBO
VEB=-4V, IC=0
-
-
-1
UNIT.
hFE(1) (Note)
VCE=-2V, IC=-100
100
-
400
hFE (2)
VCE=-2V, IC=-3A
35
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-2A, IB=-100
-
-0.35
-0.7
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=-2A, IB=-100
-
-0.94
-1.2
V
VCE=-10V, IC=-50
-
150
-
VCB=-10V, f=1
-
39
-
DC Current Gain
fT
Transition Frequency
Collector Output Capacitance
Switching
Time
Cob
Turn-on Time
ton
-
70
-
Storage Time
tstg
-
450
-
Fall Time
tf
-
35
-
nS
Note : hFE (1) Classification A:100 200, B:140 280, C:200 400
2008. 3. 11
Revision No : 4
1/3
KTB1124
2008. 3. 11
Revision No : 4
2/3
KTB1124
2008. 3. 11
Revision No : 4
3/3