SEMICONDUCTOR KTB1124 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624. MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Vollector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current IC -3 A Collector Current(Pulse) ICP -6 A Base Current IB -600 mA PC 500 mW PC* 1 W Tj 150 Collector Power Dissipation Junction Temperature Tstg Storage Temperature Range -55 * : Package mounted on ceramic substrate(250mm 2 150 0.8t) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. Collector Cut-off Current ICBO VCB=-40V, IE=0 - - -1 Emitter Cut-off Current IEBO VEB=-4V, IC=0 - - -1 UNIT. hFE(1) (Note) VCE=-2V, IC=-100 100 - 400 hFE (2) VCE=-2V, IC=-3A 35 - - Collector-Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-100 - -0.35 -0.7 V Base-Emitter Saturation Voltage VBE(sat) IC=-2A, IB=-100 - -0.94 -1.2 V VCE=-10V, IC=-50 - 150 - VCB=-10V, f=1 - 39 - DC Current Gain fT Transition Frequency Collector Output Capacitance Switching Time Cob Turn-on Time ton - 70 - Storage Time tstg - 450 - Fall Time tf - 35 - nS Note : hFE (1) Classification A:100 200, B:140 280, C:200 400 2008. 3. 11 Revision No : 4 1/3 KTB1124 2008. 3. 11 Revision No : 4 2/3 KTB1124 2008. 3. 11 Revision No : 4 3/3