SEMICONDUCTOR KTA1045D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A I C J D FEATURES High breakdown voltage VCEO 120V, high current 1A. O K E Q Complementary to KTC2025D/L M B Low saturation voltage and good linearity of hFE. H P F 1 ) RATING UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5 V IC -1 ICP -2 Dissipation Tc=25 Junction Temperature Storage Temperature Range DPAK I A C J D A 1.0 PC 3. EMITTER B Ta=25 2. COLLECTOR W 8 K Collector Power MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.20 2.00 + _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX 1. BASE SYMBOL Collector Current 3 Q CHARACTERISTIC 2 P H G Tj 150 Tstg -55 150 E MAXIMUM RATING (Ta=25 L F DIM A B C D E F H I J K L M O P Q F 1 F 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 0.2 1.10 + _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.2 2.0 + _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC IPAK ) MIN. TYP. MAX. UNIT Collector Cut of Current ICBO VCB=-50V, IE=0 - - -1 A Emitter Cut of Current IEBO VEB=-4V, IC=0 - - -1 Collector-Base Breakdown Voltage V(BR)CBO -120 - - A V Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10 A, IE=0 IC=-1mA, IB=0 -120 Emitter-Base Breakdown Voltage V(BR)EBO DC Current Gain Gain Bandwidth Product SYMBOL TEST CONDITION - - V -5 - - V hFE(1) Note IE=-10 A, IC=0 VCE=-5V, IC=-50mA 100 - 320 hFE(2) VCE=-5V, IC=-500mA 20 - - fT VCE=-10V, IC=-50mA - 110 - MHz VCB=-10V, IE=0, f=1MHz - 30 - pF Collector-Emitter Saturation Voltage VCE(sat) Cob IC=-500mA, IB=-50mA - -0.15 -0.4 V Base-Emitter Saturation Voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V - 80 - - 100 - - 600 - Output Capacitance Turn-on Time Switching Time Turn-off Time ton toff 1Ω 20µsec I B2 I B1 24Ω 100Ω 1uF Storage Time (Note) : hFE(1) Classification 2003. 3. 27 tstg nS 1uF 2V -12V VCE =-12V I C =10I B1 =-10I B2 =500mA Y:100 200, GR:160 320 Revision No : 5 1/2 KTA1045D/L VCE(sat) - I C COLLECTOR CURRENT I C (A) -1.6 Tc=25 C -1.4 -20 -1.2 -15 -1.0 -12 -0.8 -8 -10 -6 -0.6 -4 -0.4 -2 -0.2 I B =0mA 0 0 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE - I C -1.0 I C /I B =10 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -1 -3 -1k -3k -0.8 Pc - Ta -0.6 -0.4 -0.2 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE V BE (V) -1.2 200 f=1MHz 100 COLLECTOR DISSIPATION PC (W) COLLECTOR CURRENT I C (A) OUTPUT CAPACITANCE C ob (pF) -300 -1.0 50 10 1 Tc=25 C 2 Ta=25 C 1 8 6 4 2 0 30 2 0 20 40 60 80 100 120 140 160 AMBIENT TMMPERATURE Ta ( C) 10 5 5 -1 -3 -10 -30 -100 COLLECTOR-BASE VOLTAGE V CE (V) SAFE OPERATING AREA 500 COLLECTOR CURRENT I C (A) h FE - I C DC CURRENT GAIN hFE -100 VCE =-5V -1.2 C ob - VCB VCE =-5V 300 100 50 30 10 -1 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) 2003. 3. 27 -30 COLLECTOR CURRENT I C (mA) VBE - I C -1.4 -10 Revision No : 5 -5k 5 3 I C MAX.(PULSED) * I C MAX. (CONTINUOUS) 10 0 1m µS* DC 1 S 0 O m * Tc PER S* =2 A TI 5 C ON 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 1 10 100 COLLECTOR-EMITTER VOLTAGE VCE (V) 2/2