SEMICONDUCTOR KTA1271A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B ・High hFE : hFE=100～320. C A ・Complementary to KTC3203A. N K MAXIMUM RATING (Ta=25℃) G SYMBOL RATING UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Emitter Current IE 800 mA Collector Power Dissipation PC 400 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range J D H 2 3 DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M 1 C F F L CHARACTERISTIC E 1. EMITTER 2. COLLECTOR 3. BASE TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA V(BR)CEO IC=-10mA, IB=0 -30 - - V hFE(1) (Note) VCE=-1V, IC=-100mA 100 - 320 hFE(2) VCE=-1V, IC=-700mA 35 - - VCE(sat) IC=-500mA, IB=-20mA - - -0.7 V Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage VBE VCE=-1V, IC=-10mA -0.5 - -0.8 V Transition Frequency fT VCE=-5V, IC=-10mA - 120 - MHz VCB=-10V, IE=0, f=1MHz - 19 - pF Collector Output Capacitance Note : hFE(1) Classification 2010. 1. 28 0:100～200, Revision No : 1 Cob Y:160～320 1/2 KTA1271A I C - V CE 2k COMMON EMITTER Ta=25 C -800 -8 DC CURRENT GAIN h FE -7 -6 -5 -600 -4 -400 -3 -2 -200 0 -2 -3 -4 -5 Ta=25 C Ta=-25 C 100 50 30 10 -6 -1 COLLECTOR-EMITTER VOLTAGE V CE (V) -3 -10 -0.1 Ta=100 C Ta=25 C Ta=-25 C -0.01 -1 -3 -10 -30 -100 -300 -1k COLLECTOR CURRENT I C (mA) -1k -500 -300 -1k COMMON EMITTER VCE =-1V 100 C -100 -50 -30 Ta= COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VCE(sat) (V) -0.5 -0.3 -0.05 -0.03 -300 I C - V BE COMMON EMITTER I C /I B =25 -1 -100 COLLECTOR CURRENT I C (mA) VCE(sat) - I C -3 -30 -10 C -1 Ta=100 C 25 C 0 500 300 Ta= -25 0 IB =-1mA COMMON EMITTER VCE =-1V 1k Ta= COLLECTOR CURRENT I C (mA) -1k h FE - I C -5 -3 -1 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR POWER DISSIPATION P C (mW) Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2010. 1. 28 Revision No : 1 2/2