SEMICONDUCTOR KTC9018 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B A FEATURES ・Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). ・Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. ・High Transition Frequency : fT=800MHz(Typ.). C N K E G J D MAXIMUM RATING (Ta=25℃) UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 mA Emitter Current IE -20 mA Junction Temperature Storage Temperature Range 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR TO-92 625 PC* Collector Power Dissipation F C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC H F DIM A B C D E F G H J K L M N mW 400 Tj 150 ℃ Tstg -55～150 ℃ * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 μA 40 - 198 - - 1.0 pF 500 800 - MHz - - 30 pS - - 4.0 15 - - hFE (Note) DC Current Gain VCE=5V, IC=1mA Reverse Transfer Capacitance Cre VCE=6V, f=1MHz, IE=0 Transition Frequency fT VCE=10V, IC=8mA, f=100MHz CC・rbb' Collector-Base Time Constant Noise Figure NF Gpe Power Gain Note : hFE Classification E:40～59, 2010. 6. 25 VCE=6V, IE=-1mA, f=30MHz F:54～80, Revision No : 1 VCE=6V, IE=-1mA, f=100MHz G:72～108, H:97～146, dB I:130～198 1/1