SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L 2 D NF=1.2dB, |S21e| =13dB (f=1GHz). H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 1.5 V Collector Current IC 65 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 Tstg -55 150 P P J K C CHARACTERISTIC 1 ) N MAXIMUM RATING (Ta=25 3 G A 2 DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M 1. EMITTER 2. BASE 3. COLLECTOR Storage Temperature Range SOT-23 Marking h FE Rank Type Name Lot No. R ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=10V, IE=0 - - 1 A Emitter Cut-off Current IEBO VEB=1V, IC=0 - - 1 A 50 - 250 hFE (Note1) DC Current Gain VCE=8V, IC=20mA Reverse Transfer Capacitance Cre VCB=10V, IE=0, f=1MHz (Note2) - 0.35 0.9 pF Transition Frequency fT VCE=8V, IC=20mA - 9 - GHz Insertion Gain |S21e|2 VCE=8V, IC=20mA, f=1GHz 11 13 - dB Noise Figure NF VCE=8V, IC=7mA, f=1GHz - 1.2 2.5 dB Note 1 : hFE Classification L:50~100, M:80~160, N:125~250. Note 2 : Cre is measured by 3 terminal method with capacitance bridge. 2007. 8. 22 Revision No : 0 1/5 KTC3790S hFE - IC DC CURRENT GAIN hFE 300 200 100 70 50 30 VCE=8V Ta=25 C 10 0.5 5 1 50 10 COLLECTOR CURRENT IC (mA) REVERSE TRANSFER CAPACITANCE Cre (pF) TYPICAL CHARACTERISTICS Cre - VCB 3 2 1 0.5 f =1.0MHz Ta=25 C 0.1 1 5 S21e 2 INSERTION GAIN S21e (dB) TRANSITION FREQUENCY fT (GHz) 20 10 5 VCE=8V Ta=25 C 1 5 10 20 30 30 2 - IC 15 10 5 VCE = 8V f = 1.0GHz Ta=25 C 0 0.5 1 20 COLLECTOR-BASE VOLTAGE VCB (V) f T - IC 30 10 1 5 10 50 70 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 2 S21e - f NF - I C 7 VCE=8V IC=20mA 16 Ta=25 C S21e 12 NOISE FIGURE NF (dB) INSERTION GAIN S21e 2 (dB) 20 2 8 4 5 4 3 2 1 0 0.1 0.5 1.0 FREQUENCY f (GHz) 2007. 8. 22 VCE = 8V f = 1.0GHz Ta=25 C 6 Revision No : 0 2.0 3.0 0 0.5 1 5 10 50 70 COLLECTOR CURRENT IC (mA) 2/5 KTC3790S COLLECTOR POWER DISSIPATION PC (mW) Pc - Ta 200 100 0 0 50 100 150 AMBIENT TEMPERATURE Ta ( C) S-PARAMETER (VCE = 8V, IC = 5mA, ZO=50 Ta = 25 ) S11 Frequency S21 S21 S22 MHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.728 -45.3 12.107 138.7 0.036 66.2 0.825 -21.6 400 0.490 -74.5 8.097 114.2 0.065 61.6 0.675 -26.6 600 0.343 -93.2 6.260 102.3 0.079 61.6 0.582 -29.0 800 0.253 -110.1 4.623 90.1 0.090 61.2 0.529 -28.6 1000 0.202 -131.1 4.004 83.6 0.101 61.3 0.500 -30.1 1200 0.176 -148.9 3.250 75.8 0.125 60.8 0.470 -31.4 1400 0.176 -162.8 3.021 69.4 0.144 60.0 0.448 -33.4 1600 0.179 173.9 2.575 63.4 0.160 59.8 0.427 -34.8 1800 0.186 163.3 2.520 58.9 0.188 59.1 0.406 -37.5 2000 0.211 151.1 2.183 53.4 0.202 58.9 0.386 -44.5 (VCE = 8V, IC = 20mA, ZO=50 Ta = 25 ) S11 Frequency S21 S21 S22 MHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.366 -66.8 19.757 116.9 0.033 62.6 0.587 -22.5 400 0.194 -88.9 10.502 98.8 0.055 70.6 0.485 -23.8 600 0.124 -104.3 7.591 91.1 0.072 74.6 0.453 -24.3 800 0.077 -132.0 5.446 82.0 0.095 73.2 0.419 -23.2 1000 0.063 -156.4 4.653 77.6 0.107 72.1 0.413 -24.2 1200 0.065 179.5 3.754 71.6 0.135 72.1 0.392 -26.4 1400 0.074 168.0 3.460 66.5 0.164 70.1 0.369 -29.9 1600 0.108 147.0 2.934 61.9 0.178 69.6 0.347 -32.2 1800 0.116 137.6 2.870 58.2 0.205 66.3 0.333 -34.3 2000 0.134 131.2 2.479 53.4 0.221 64.0 0.312 -42.1 2007. 8. 22 Revision No : 0 3/5 KTC3790S S11e VCE =8V I C =5mA Ta=25 C (UNIT : Ω) S12e VCE =8V I C =5mA Ta=25 C 90 j50 60 120 j25 j100 2GHz j150 j10 30 150 j250 2GHz 10 0 25 f=0.2GHz 100 250 0.24 _ 180 + 50 -j10 0 0.061 0.12 0.18 0 -j250 f=0.2GHz -j25 -30 -150 -j150 -j100 -60 -120 -90 -j50 S21e VCE =8V I C =5mA Ta=25 C S22e VCE =8V I C =5mA Ta=25 C (UNIT : Ω) 90 60 120 j50 j25 j100 j150 30 150 f=0.2GHz j10 _ 180 + 0 2GHz 3.6 7.3 11 15 0 0 j250 10 25 100 50 250 f=0.2GHz 2GHz -j10 -30 -150 -j150 -j25 -j100 -60 -120 -90 2007. 8. 22 -j250 Revision No : 0 -j50 4/5 KTC3790S S11e VCE =8V I C =20mA Ta=25 C (UNIT : Ω) S12e VCE =8V I C =20mA Ta=25 C 90 j50 60 120 j25 j100 2GHz j150 j10 30 150 j250 2GHz 10 0 25 100 50 250 _ 180 + f=0.2GHz -j10 0 f=0.2GHz 0.066 0.27 0.13 0.2 0 -j250 -j150 -j25 -30 -150 -j100 -60 -120 -j50 S21e VCE =8V I C =20mA Ta=25 C 120 -90 S22e VCE =8V I C =20mA Ta=25 C (UNIT : Ω) 90 60 j50 j25 j100 f=0.2GHz j150 30 150 j10 2GHz 0 _ 180 + 5.9 12 18 24 0 0 j250 10 25 100 50 2GHz 250 f=0.2GHz -j10 -j250 -j150 -30 -150 -j25 -60 -120 -90 2007. 8. 22 -j100 Revision No : 0 -j50 5/5