SEMICONDUCTOR KTC3605T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. E FEATURES K K B DIM A B C D E 1 6 G 2 5 G Low Noise Figure, High Gain. 3 4 2 NF=1.1dB, |S21e| =13dB (f=1GHz). D F A Two internal isolated Transistors in one package. SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 1.5 V IC 40 mA PC* 900 mW Tj 150 Tstg -55 150 C CHARACTERISTIC ) L MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + F G 0.95 H I _ 0.05 0.16 + 0.00-0.10 J 0.25+0.25/-0.15 K L 0.60 0.55 I H J J 1. Q1 Base 2. Q1 Emitter Collector Current 3. Q2 Collector 4. Q2 Base Collector Power Dissipation Junction Temperature Storage Temperature Range *Package mounted on a ceramic board (600mm2 5. Q2 Emitter 6. Q1 Collector TS6 0.8mm) EQUIVALENT CIRCUIT (Top View) 6 5 Marking 4 hFE Rank Lot No. Q2 Type Name Q1 1 2 R 3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=10V, IE=0 - - 1 A Emitter Cut-off Current IEBO VEB=1V, IC=0 - - 1 A 50 - 250 - 0.7 - pF - 0.5 0.95 pF VCE=8V, IC=20mA 7 10 - GHz |S21e|2 (1) VCE=8V, IC=20mA, f=1GHz 10 13 - dB |S21e|2 (2) VCE=8V, IC=20mA, f=2GHz - 7 - dB NF (1) VCE=8V, IC=5mA, f=1GHz - 1.1 2.5 dB NF (2) VCE=8V, IC=5mA, f=2GHz - 1.7 - dB hFE (Note1) DC Current Gain Collector Output Capacitance VCE=8V, IC=20mA Cob VCB=10V, IE=0, f=1MHz (Note2) Reverse Transfer Capacitance Cre Transition Frequency fT Insertion Gain Noise Figure Note 1 : hFE Classification H:50~100, J:80~160, K:125~250 Note 2 : Cre is measured by 3 terminal method with capacitance bridge. 2007. 6. 21 Revision No : 0 1/5 KTC3605T h FE - I C DC CURRENT GAIN h FE 300 200 100 70 50 30 VCE=8V Ta=25 C 10 1 2 5 3 7 10 20 30 50 OUTPUT CAPACITANCE C ob (pF) REVERSE TRANSFER CAPACITANCE C re (pF) TYPICAL CHARACTERISTICS (Ta=25 C) C ob , C re - VCB 5 f=1MHz Ta=25 C 3 C ob 1 C re 0.5 0.3 0.1 0.1 COLLECTOR CURRENT I C (mA) 0.3 0.5 S 2le (dB) 2 10 INSERTION GAIN S 2le TRANSITION FREQUENCY f T (GHz) 12 8 6 4 VCE=8V Ta=25 C 0 1 3 7 10 5 6 4 VCE=8V f=2GHz Ta=25 C 2 1 3 5 7 10 30 COLLECTOR CURRENT I C (mA) NF - I C 5 VCE=8V Ta=25 C 20 15 10 5 0 4 3 Hz f=2G 2 Hz f=1G 1 0 0.1 0.2 0.3 0.5 0.7 1 FREQUENCY f (GHz) 2007. 6. 22 - IC 0 VCE=8V IC=20mA Ta=25 C 25 2 8 - f 30 10 10 30 NOISE FIGURE NF (dB) (dB) 2 S 2le INSERTION GAIN 2 5 12 COLLECTOR CURRENT IC (mA) S 2le 3 COLLECTOR-BASE VOLTAGE VCB (V) f T - IC 2 1 Revision No : 0 2 3 1 2 3 5 7 10 20 30 50 COLLECTOR CURRENT IC (mA) 2/5 KTC3605T 2 - VCE 10 (dB) IC =20mA f=2GHz Ta=25 C 2 8 INSERTION GAIN S 2le COLLECTOR POWER DISSIPATION P C (mW) S 2le 6 4 2 0 0 2 4 6 8 10 Pc - Ta 300 200 100 0 0 50 COLLECTOR-EMITTER VOLTGE VCE (V) S-PARAMETER (VCE=8V, IC=5mA, ZO=50 150 AMBIENT TEMPERATURE Ta ( C) , Ta=25 ) |S11| Frequency 100 |S21| |S12| |S22| (MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.683 -50.1 10.186 138.3 0.049 62.0 0.773 -30.0 400 0.462 -86.9 7.472 114.6 0.071 54.3 0.556 -39.6 600 0.343 -113.1 5.618 100.9 0.086 53.8 0.448 -41.7 800 0.282 -133.6 4.407 91.7 0.101 55.3 0.392 -41.6 1000 0.249 -151.0 3.663 84.7 0.115 57.2 0.360 -41.7 1200 0.236 -166.6 3.128 78.7 0.131 58.9 0.339 -41.7 1400 0.233 179.7 2.759 73.1 0.150 60.1 0.330 -42.8 1600 0.234 168.3 2.457 68.2 0.168 60.0 0.319 -45.0 1800 0.238 158.6 2.224 63.4 0.185 60.0 0.311 -47.9 2000 0.251 149.6 2.038 59.4 0.203 60.4 0.302 -50.2 (VCE=8V, IC=20mA, ZO=50 , Ta=25 ) |S11| Frequency |S21| |S12| |S22| (MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 200 0.319 -91.9 18.338 116.7 0.033 65.3 0.494 -43.5 400 0.213 -134.2 10.303 99.2 0.054 68.9 0.312 -42.4 600 0.185 -160.0 7.111 90.3 0.076 70.8 0.258 -37.6 800 0.176 -178.2 5.415 84.3 0.098 71.2 0.236 -34.3 1000 0.174 167.8 4.400 79.2 0.120 71.1 0.228 -32.0 1200 0.178 156.8 3.712 74.8 0.143 70.3 0.226 -31.5 1400 0.186 147.5 3.236 70.3 0.168 68.7 0.226 -32.8 1600 0.194 139.7 2.874 66.3 0.190 66.6 0.223 -35.9 1800 0.199 133.7 2.583 62.6 0.211 64.9 0.216 -39.0 2000 0.215 127.8 2.369 58.8 0.232 63.5 0.211 -41.9 2007. 6. 22 Revision No : 0 3/5 KTC3605T S21e VCE =8V I C =5mA Ta=25 C S11e VCE =8V I C =5mA Ta=25 C (UNIT : Ω) 90 j50 10 60 120 j25 8 j100 0.4 f=0.2GHz 6 j150 0.8 1.2 4 j250 j10 30 1.0 150 2 1.6 2.0 2.0 10 25 0 1.6 1.2 100 50 250 _ 180 + 10 8 6 4 0 0 2 0.8 -j250 -j10 0.4 -j25 -30 -150 -j150 f=0.2GHz -j100 -60 -120 -j50 S12e VCE =8V I C =5mA Ta=25 C -90 S22e VCE =8V I C =5mA Ta=25 C (UNIT : Ω) 90 0.25 60 120 0.20 j50 j100 j25 2.0 0.15 150 0.10 j150 30 1.6 1.2 0.8 0.05 _ 180 + 0 j250 j10 0.4 f=0.2GHz 0.05 0.10 0.15 0.20 0 0.25 10 25 50 100 1.6 -j10 2.0 0.8 0.4 1.2 f=0.2GHz -30 -150 -j250 -j150 -j25 -j100 -60 -120 -90 2007. 6. 22 250 0 Revision No : 0 -j50 4/5 KTC3605T S11e VCE =8V I C =20mA Ta=25 C (UNIT : Ω) S21e VCE =8V I C =20mA Ta=25 C j50 90 20 60 120 j25 f=0.2GHz j100 16 12 j150 30 150 j10 0.4 8 j250 2.0 1.6 25 1.2 0.8 10 0 4 50 100 250 _ 180 + 20 16 12 8 0.6 1.2 1.6 2.0 0 0 4 0.4 -j10 -j250 f=0.2GHz -j150 -j25 -30 -150 -j100 -60 -120 -j50 -90 S12e VCE =8V I C =20mA Ta=25 C S22e VCE =8V I C =20mA Ta=25 C (UNIT : Ω) 90 0.25 60 120 0.20 2.0 j50 j25 j100 1.6 0.15 150 30 1.2 0.10 j150 0.8 j250 j10 0.4 f=0.2GHz 0.05 _ 180 + 0 0.05 0.10 0.15 0.20 0 0.25 10 25 50 0 1.6 2.0 250 0.8 0.4 f=0.2GHz -j10 -j250 -30 -150 -j150 -j25 -j100 -60 -120 -90 2007. 6. 22 100 1.2 Revision No : 0 -j50 5/5