SEMICONDUCTOR KTC3203A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C A ・Complementary to KTA1271A N MAXIMUM RATING (Ta=25℃) RATING UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA Collector Power Dissipation PC 400 mW Junction Temperature Tj 150 ℃ Operating Temperature Topr -40～85 ℃ Storage Temperature Range Tstg -55～150 ℃ E G D J SYMBOL H 2 3 DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M 1 C F F L CHARACTERISTIC K 1. EMITTER 2. COLLECTOR 3. BASE TO-92 (F) ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=35V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA V(BR)CEO IC=10mA, IB=0 30 - - V hFE(1) (Note) VCE=1V, IC=100mA 100 - 320 hFE(2) VCE=1V, IC=700mA 35 - - VCE(sat) IC=500mA, IB=20mA - - 0.5 V Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage VBE VCE=1V, IC=10mA 0.5 - 0.8 V Transition Frequency fT VCE=5V, IC=10mA - 120 - MHz VCB=10V, IE=0, f=1MHz - 19 - pF Cob Collector Output Capacitance Note : hFE(1) Classification 2010. 1. 28 0:100～200, Y:160～320 Revision No : 1 1/2 KTC3203A 8 DC CURRENT GAIN h FE 1k COMMON EMITTER Ta=25 C 800 7 6 5 4 600 3 400 2 I B =1mA 200 VCE=1V 500 300 Ta=100 C Ta=25 C 100 Ta=-25 C 50 30 0 1 2 3 4 5 10 30 100 300 1k VCE(sat) - I C I C - V BE C 25 C -25 C Ta=-25 C Ta=25 C Ta=100 C 0.01 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =1V 100 50 30 10 5 C 00 =1 Ta 2k Ta=-2 0.3 1k 500 300 Ta=25 C 0.5 0.03 3 COLLECTOR CURRENT IC (mA) COMMON EMITTER I C /I B =25 0.05 1 COLLECTOR-EMITTER VOLTAGE VCE (V) 1 0.1 10 6 C 0 1 COLLECTOR POWER DISSIPATION PC (mW) COMMON EMITTER Ta= 100 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) h FE - I C 1k COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V CE 5 3 1 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2010. 1. 28 Revision No : 1 2/2