SEMICONDUCTOR PG05DXTET TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. B FEATURES B1 30 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to 5 DIM A C Small package for use in portable electronics. 1 A1 A C IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) 2 A1 B D Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. 3 B1 C D 4 Low clamping voltage. P H P J P J H Low leakage current. MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+ 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 1. NC 2. COMMON ANODE 3. (TVS) D1 CATHODE 4. (TVS) D2 CATHODE 5. (TVS) D3 CATHODE APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s) TESV Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. Marking Type Name 4 5 SYMBOL RATING UNIT PPK 30 W Junction Temperature Tj 150 Storage Temperature Tstg -55 150 Peak Pulse Power (tp=8/20 s) 1 2 3 5 CHARACTERISTIC TF ) 4 MAXIMUM RATING (Ta=25 D3 D2 3 2 1 D1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Stand-Off Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 5 V 6.47 - 7.14 V VBR Reverse Breakdown Voltage It=1mA Reverse Leakage Current IR VRWM=4.3V - - 1 A Junction Capacitance CJ VR=0V, f=1MHz - 12 15 pF 2007. 9. 10 Revision No : 2 1/2 PG05DXTET POWER DERATION CURVE 1K 110 RATED POWER OR IPP (%) PEAK PULSE POWER PPP (W) NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME 100 10 1 10 100 90 80 70 60 50 40 Peak Pulse Power 8/20us 30 20 10 0 Average Power 0 100 PULSE DURATION tP (µs) 25 50 75 150 CJ - VR 12 110 (pF) Waveform Parameters : tr=8µs td=20µs 100 90 80 70 60 50 40 CAPACITANCE CJ PEAK PULSE CURRENT IPP (%) 125 AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM e -t td=lpp/2 30 20 10 0 10 8 6 4 2 0 0 5 10 15 20 TIME (µs) 2007. 9. 10 100 Revision No : 2 25 30 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) 2/2