SEMICONDUCTOR SMFB13L TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. E 2 FEATURES Low Profile Surface Mount Package. Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free E Wheeling, and Polarity Protection Applications. F 1 C D APPLICATION DIM A B C D E F G H Switching Power Supply. Reversed Battery Connection Protection. H DC/DC Converter. Cellular Phones. G 1. ANODE 2. CATHODE MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.05 2.6 + _ 0.1 3.5+ _ 0.05 0.9 + _ 0.05 1.6 + _ 0.05 0.65+ _ 0.05 0.11+ 0 ~ 0.1 _ 0.05 0.98+ ) CHARACTERISTIC SYMBOL RATING UNIT Maximum Repetitive Peak Reverse Voltage VRRM 30 V IO 1 A IFSM 22 A Tj -40 125 Tstg -40 125 Average Output Rectitifed Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range SMF Marking Lot No. 13L Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=1.0A - - 0.36 V Repetitive Peak Reverse Current IRRM VRRM=Rated - - 1.0 mA Rth(j-1) Junction to lead - - 20 - - 140 Thermal Resistance 2008. 9. 11 Rth(j-a) Revision No : 6 Junction to ambient (on a grass-epoxy board) /W 1/2 IF - VF 5 3 Tj =125 C 0.5 0.3 0.1 PEAK SURGE FORWARD CURRENT I FSM (A) 25 C 1 0 0.2 0.4 0.6 0.8 1.2 PF(AV) - IF(AV) 0.6 DC 0.5 180 0.4 120 0.3 α=60 RECTANGULAR WAVEFORM 0.2 0 0.1 α 360 CONDUCTION ANGLE α 0 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE V F (V) AVERAGE FORWARD CURRENT I F(AV) (A) SURGE FORWARD CURRENT (NON - REPETITIVE) Ta - IF(AV) 28 Ta=25 C f=60Hz 24 20 16 12 8 4 0 1 10 NUMBER OF CYCLES 2008. 9. 11 1.0 Revision No : 6 100 MAXIMUM ALLOWABLE TEMPERATURE Ta MAX ( C) FORWARD CURRENT I F (A) 10 AVERAGE FORWARD POWER DISSIPATION P F(AV) (W) SMFB13L 140 1.6 ON A GRASS-EPOXY BOARD 120 100 α=60 80 120 40 0 20 α DC 180 RECTANGULAR WAVEFORM 60 I F(AV) 360 CONDUCTION ANGLE α V R =15V 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE FORWARD CURRENT I F(AV) (A) 2/2