SEMICONDUCTOR SMFB16 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. E 2 FEATURES A B ・For Use in Low Voltage, High Frequency inverters, Free E Wheeling, and Polarity Protection Applications. F 1 C D APPLICATION ・Switching Power Supply. DIM A B C D E F G H ・Reversed Battery Connection Protection. ・DC/DC Converter. H ・Cellular Phones. G 1. ANODE 2. CATHODE MILLIMETERS _ 0.05 2.6 + _ 0.1 3.5+ _ 0.05 0.9 + _ 0.05 1.6 + _ 0.05 0.65+ _ 0.05 0.11+ 0 ~ 0.1 _ 0.05 0.98+ SMF MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Maximum Repetitive Peak Reverse Voltage VRRM 60 V IO 1 A IFSM 30 A Tj -65～150 ℃ Tstg -65～150 ℃ Average Output Rectitifed Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range Marking Lot No. S16 Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=1.0A - 0.49 0.55 V Repetitive Peak Reverse Current IRRM VRRM=Rated - 7 50 ㎂ VR=10V, f=1MHz - 40 - pF Junction to lead - - 20 - - 140 CT Total Capacitance Rth(j-1) Thermal Resistance 2009. 4. 3 Rth(j-a) Revision No : 0 Junction to ambient (on a grass-epoxy board) ℃/W 1/2 SMFB16 SURGE FORWARD CURRENT (NON - REPETITIVE) FORWARD CURRENT I F (A) 1 Ta = 125 C 0.1 Ta = 25 C 0.01 0.001 Ta = -25 C 0 0.2 0.4 FORWARD VOLTAGE V F (V) 2009. 4. 3 Revision No : 0 0.6 PEAK SURGE FORWARD CURRENT I FSM (A) I F - VF 100 Ta=25 C f=60Hz 80 60 40 20 0 1 10 100 NUMBER OF CYCLES 2/2