SEMICONDUCTOR SMFB23 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE E SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. A B Low Power Loss, High Efficiency. E Low Forward Voltage. APPLICATION F C Switching Power Supply. D Reversed Battery Connection Protection. DIM A B C D E DC/DC Converter. H G Cellular Phones. F G H MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.05 2.6 + _ 0.1 3.5 + _ 0.05 0.9 + _ 0.05 1.6 + _ 0.05 0.65 + _ 0.05 0.11 + 0 ~ 0.1 _ 0.05 0.98 + ) CHARACTERISTIC SYMBOL RATING UNIT Maximum Repetitive Peak Reverse Voltage VRRM 30 V IO 2 A IFSM 33 A Tj -40 125 Tstg -40 150 Average Output Rectitifed Current Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range SMF Marking Lot No. B23 Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Peak Forward Voltage VFM IFM=2A - - 0.42 V Repetitive Peak Reverse Current IRRM VRRM=Rated - - 1.0 mA Rth(j-1) Junction to lead - - 20 - - 70 - - 135 Rth(j-a) Thermal Resistance Rth(j-a) 2008. 9. 11 Revision No : 2 Junction to ambient (on a ceramic board) Junction to ambient (on a grass-epoxy board) /W 1/2 I F - VF 5 3 T j =125 C 25 C 1 0.5 0.3 0.1 0.05 0.03 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 P F(AV) - I F(AV) 0.7 DC 0.6 0.5 180 120 0.4 α=60 0.3 0.2 0 0.4 0 Ta=25 C f=60Hz 30 20 10 0 Revision No : 2 100 MAXIMUM ALLOWABLE TEMPERATURE Ta MAX ( C) PEAK SURGE FORWARD CURRENT I FSM (A) 2008. 9. 11 0.8 Ta 40 NUMBER OF CYCLES 360 CONDUCTION ANGLE α 1.2 1.6 2.0 2.4 AVERAGE FORWARD CURRENT I F(AV) (A) SURGE FORWARD CURRENT (NON - REPETITIVE) 10 α 0 0.1 FORWARD VOLTAGE V F (V) 1 RECTANGULAR WAVEFORM - I F(AV) 140 ON A GRASS-EPOXY BOARD 120 100 α=60 80 40 20 DC RECTANGULAR WAVEFORM 60 I F(AV) FORWARD CURRENT I F (A) 10 AVERAGE FORWARD POWER DISSIPATION P F(AV) (W) SMFB23 0 α 120 180 360 CONDUCTION ANGLE α VR=15V 0 0 0.4 0.8 1.2 1.6 2.0 2.4 AVERAGE FORWARD CURRENT I F(AV) (A) 2/2