Diodes SMD Type Silicon PIN Diodes BA779;BA779S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Wide frequency range 10 MHz to 1 GHz 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Reverse Voltage Test Conditions Value Unit 30 V mA VR Forward Current IF 50 Junction Temperature Tj 125 Storage temperature range Tstg -55 to +125 Junction ambient RthJA on PC board 50mm 50mm 500 1.6mm K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Max Unit Forward Voltage VF IF = 20 mA 1 V Reverse Current IR V R = 30 V 50 nA Diode capacitance CD f = 100 MHz, V R = 0 0.5 pF rf f = 100 MHz, IF = 1.5 mA 50 zr f = 100 MHz, V R = 0 Differential forward resistance Reverse impedance BA799 BA799S Minority carrier lifetime Min Typ 5 K 9 ô IF = 10 mA, IR = 10 mA 4 S www.kexin.com.cn 1