Transistors SMD Type NPN Silicon Extremely High Voltage Transistor CZTA44 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 4.6 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO 450 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current IC 300 mA Power Dissipation PD 2 W TJ,Tstg -65 to 150 ÈJA 62.5 Operating and Storage Junction Temperature Thermal Resistance /W Electrical Characteristics Ta = 25 Symbol Testconditons ICBO VCB=400V Min Max Unit 100 nA ICES VCE=400V 500 nA IEBO VBE=4.0V 100 nA BVCBO IC=100ìA 450 V BVCES IC=100ìA 450 V BVCEO IC=1.0mA 400 V BVEBO IE=10ìA 6.0 V VCE(SAT) IC=1.0mA, IB=0.1mA 0.40 V VCE(SAT) IC=10mA, IB=1.0mA 0.50 V VCE(SAT) IC=50mA, IB=5.0mA 0.75 V VBE(SAT) IC=10mA, IB=1.0mA 0.75 V hFE fT VCE=10V, IC=1.0mA 40 VCE=10V, IC=10mA 50 VCE=10V, IC=50mA 45 VCE=10V, IC=100mA 20 VCE=10V, IC=10mA, f=10MHz 20 200 MHz Cob VCB=20V, IE=0, f=1.0MHz 7.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz 130 pF www.kexin.com.cn 1