Transistors IC SMD Type Product specification KO3414(AO3414) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features (VGS = 4.5V) RDS(ON) 63m (VGS = 2.5V) RDS(ON) 87m (VGS = 1.8V) 1 0.55 50m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 RDS(ON) +0.1 1.3-0.1 +0.1 2.4-0.1 ID = 4.2A (VGS=4.5V) 0.4 3 VDS (V) = 20V 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V Continuous Drain Current *1 TA=25 ID 3.2 TA=70 Pulsed Drain Current *2 Power Dissipation *1 4.2 IDM TA=25 PD A 15 1.4 W 0.9 TA=70 Themal Resistance.Junction-to-Ambient *1 Themal Resistance.Junction-to-Case Junction and Storage Temperature Range 125 /W RthJC 80 /W TJ, TSTG -55 to 150 RthJA *1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors MOSFET IC SMD Type Product specification KO3414(AO3414) Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage VDSS IDSS Zero Gate Voltage Drain Current Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Testconditons Min ID=250ìA, VGS=0V RDS(ON) 20 Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs V VDS=16V, VGS=0V ,TJ=55 5 VDS=0V, VGS= 100 nA 1 V A 8V VDS=VGS ID=250ìA 0.4 VGS=4.5V, ID=4.2A TJ=125 VGS=1.8V, ID=3.2A ID(ON) Unit 1 VGS=2.5V, ID=3.7A On state drain current Max VDS=16V, VGS=0V VGS=4.5V, ID=4.2A Static Drain-Source On-Resistance Typ VGS=4.5V, VDS=5V 0.6 41 50 58 70 52 63 67 87 15 VDS=5V, ID=4.2A A 11 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz m S 436 pF 66 pF 44 pF 3 VGS=4.5V, VDS= =10V, ID=4.2A 6.2 nC 1.6 nC Gate Drain Charge Qgd 0.5 nC Turn-On DelayTime tD(on) 5.5 ns Turn-On Rise Time tr 6.3 ns Turn-Off DelayTime VGS=4.5V, VDS=10V, RL=2.7Ù,RGEN=6Ù tD(off) 40 ns Turn-Off FallTime tf 12.7 ns Body Diode Reverse Recovery Time trr IF=4A, dI/dt=100A/ s 12.3 ns Body Diode Reverse Recovery Charge Qrr IF=4A, dI/dt=100A/ s 3.5 Maximum Body-Diode Continuous Current IS Diode Forward Voltage http://www.twtysemi.com VSD IS=1A,VGS=0V [email protected] 0.76 4008-318-123 nC 2 A 1 V 2 of 2