Transistors SMD Type Epitaxial Planar PNP Silicon Transistor 2SA1455K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low noise design:NF=0.2dB(Typ.) 0.55 High breakdown voltage:VCEO=-120V +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -120 V Collector-emitter breakdown voltage BVCEO IC=-1mA -120 V Emitter-base breakdown voltage BVEBO IE=-50ìA -5 V Collector cutoff current ICBO VCB=-100V -0.5 ìA Emitter cutoff current IEBO VEB=-4V -0.5 ìA hFE VCE=-6V, IC=-2mA DC current transfer ratio 180 820 VCE(sat) IC=-10mA, IB=-1mA Collector-emitter saturation voltage Output capacitance fT Transition frequency Cob -0.5 V VCE=-12V, IE= 2mA, f=30MHz 140 MHz VCB=-12V, IE=0A, f=1MHz 3.2 pF hFE Classification G Marking Rank R S E hFE 180 390 270 560 390 820 www.kexin.com.cn 1