KEXIN 2SA1455K

Transistors
SMD Type
Epitaxial Planar PNP Silicon Transistor
2SA1455K
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
Low noise design:NF=0.2dB(Typ.)
0.55
High breakdown voltage:VCEO=-120V
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-120
V
Collector-emitter voltage
VCEO
-120
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-50
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=-50ìA
-120
V
Collector-emitter breakdown voltage
BVCEO
IC=-1mA
-120
V
Emitter-base breakdown voltage
BVEBO
IE=-50ìA
-5
V
Collector cutoff current
ICBO
VCB=-100V
-0.5
ìA
Emitter cutoff current
IEBO
VEB=-4V
-0.5
ìA
hFE
VCE=-6V, IC=-2mA
DC current transfer ratio
180
820
VCE(sat) IC=-10mA, IB=-1mA
Collector-emitter saturation voltage
Output capacitance
fT
Transition frequency
Cob
-0.5
V
VCE=-12V, IE= 2mA, f=30MHz
140
MHz
VCB=-12V, IE=0A, f=1MHz
3.2
pF
hFE Classification
G
Marking
Rank
R
S
E
hFE
180 390
270 560
390 820
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