Transistors IC SMD Type PNP Silicon Transistor 2SC5344SF SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High hFE. 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=100ìA , IE=0 35 V Collector-emitter breakdown voltage BVCEO IC=1mA , IB=0 30 V Emitter-base breakdown voltage BVEBO IE=10ìA, IC=0 5 V Collector cutoff current ICBO VCB=35V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB=5V, IC=0 0.1 ìA DC current transfer ratio hFE VCE=1V, IC=100mA 100 320 VCE(sat) IC=500mA , IB=50mA Collector-emitter saturation voltage Transition frequency fT Output capacitance Cob 0.5 V VCE=5V, IC=10mA, 120 MHz VCB=10V, IE=0, f=1MHz 19 pF hFE Classification FA Marking Rank O Y hFE 100 200 160 320 www.kexin.com.cn 1