Transistors SMD Type Medium Power Transistor FMMT555 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 1 Amp continuous current 0.55 150 Volt VCEO 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Peak collector current ICM -2 A Collector current IC -1 A Base current Power dissipation Operating and storage temperature range IB -200 mA Ptot 500 mW Tj,Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -160 Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -150 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V Collector cutoff current ICBO Emitter cut-off current IEBO V -0.1 ìA VCB=-140V, Ta = 100 -10 ìA VEB=-4V -0.1 ìA V VCB=-140V Collector-emitter saturation voltage * VCE(sat) IC=-100mA, IB=-10mA -0.3 Base-emitter saturation voltage * VBE(sat) IC=-100mA, IB=-10mA -1 V Base-Emitter Turn-on Voltage * VBE(ON) IC=-100mA,VCE=-10V -1 V Static Forward Current Transfer Ratio Transition Frequency hFE fT Output capacitance Cobo * Pulse test: tp = 300 ìs; d IC=-10mA, VCE=-10V 50 IC=-300mA, VCE=-10V 50 IC=-50mA,VCE=-10V,f=100MHz 100 VCB=-10V,f=1MHz 300 MHz 10 pF 0.02. Marking Marking 555 www.kexin.com.cn 1