Transistors SMD Type Medium Power Transistor FCX491 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 1 Amp continuous current. +0.1 4.00-0.1 60 Volt VCEO. Ptot= 1 Watt. +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V Peak pulse current IC 1 A Continuous collector current ICM 2 A Ptot 1 W Tj,Tstg -65 to +150 Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FCX491 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Breakdown Voltages V(BR)CBO IC=100ìA 80 V Breakdown Voltages VCEO(sus) IC=10mA 60 V Breakdown Voltages V(BR)EBO IE=100ìA 5 V ICBO Collector-base cut-off current Emitter-base current VCB=60V 100 nA ICES VCE=60V 100 nA IEBO VEB=4V 100 nA IC=500mA, IB=50mA IC=1A, IB=100mA 0.25 0.5 V 1.1 V 1.0 V Collector-emitter saturation voltage * VCE(sat) Base-emitter saturation voltage * VBE(sat) IC=1A, IB=100mA Base-emitter ON voltage * VBE(on) IC=1A, VCE=5V Static Forward Current Transfer Ratio * Transitional frequency Cobo * Pulse test: tp = 300 ìs; d Marking Marking hFE fT Output capacitance 2 Testconditons N1 www.kexin.com.cn 0.02. IC=1mA, VCE=5V 100 IC=500mA, VCE=5V* 100 IC=1A, VCE=5V* 80 IC=2A, VCE=5V* 30 IC=50mA, VCE=10V f=100MHz 150 VCB=10V, f=1MHz 300 MHz 10 pF