Transistors SMD Type Medium Power Transistor FCX591A SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 Features +0.1 0.44-0.1 +0.1 2.50-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 4.00-0.1 PNP silicon planar. 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Peak pulse current IC -1 A Continuous collector current ICM -2 A IB -200 mA Ptot 1 W Tj,Tstg -65 to +150 Base current Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FCX591A Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Breakdown Voltages V(BR)CBO IC=-100ìA -40 V Breakdown Voltages * V(BR)CEO IC=-10mA -40 V Breakdown Voltages V(BR)EBO IE=-100ìA -5 V Collector Cut-Off Current ICBO VCB=-30V -100 nA Collector-Emitter Cut-Off Current ICES VCE=-30V -100 nA Emitter Cut-Off Current IEBO VEB=-4V -100 nA Collector-emitter saturation voltage * IC=-100mA, IB=-1mA VCE(sat) IC=-500mA, IB=-20mA IC=-1A, IB=-100mA -0.2 -0.35 -0.5 V Base-emitter saturation voltage * VBE(sat) IC=-1A, IB=-50mA -1.1 V Base-Emitter Turn-on Voltage * VBE(on) IC=-1A, VCE=-5V -1.0 V Static Forward Current Transfer Ratio Transitional frequency Cobo * Pulse test: tp = 300 ìs; d Marking Marking hFE fT Output capacitance 2 Testconditons P2 www.kexin.com.cn 0.02. IC=-1mA, 300 IC=-100mA*, 300 IC=-500mA*, VCE=-5V 250 IC=-1A*, 160 IC=-2A*, 30 IC=-50mA, VCE=-10V,f=100MHz 150 VCB=-10V, f=1MHz 800 MHz 10 pF