Transistors SMD Type NPN Silicon Planar High Performance Transistor FZT649 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 25 Volt VCEO. 3 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3 Low saturation voltage. 4 Excellent hFE specified up to 6A. 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Peak pulse current IC 3 A Continuous collector current ICM 8 A Power dissipation Ptot 2 W Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FZT649 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit V(BR)CBO IC=100ìA 35 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 25 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 Collector Cut-Off Current ICBO VCB=30V VCB=30V,Ta = 100 Emitter Cut-Off Current IEBO VEB=4V V 0.1 10 ìA 0.1 ìA 0.30 0.60 V Collector-emitter saturation voltage * VCE(sat) IC=1A, IB=100mA IC=3A, IB=300mA 0.12 0.40 Base-emitter saturation voltage * VBE(sat) IC=1A, IB=100mA 0.9 1.25 V Base-Emitter Turn-On Voltage * VBE(on) IC=1A, VCE=2V 0.8 1.0 V Static Forward Current Transfer Ratio Transitional frequency hFE fT Output capacitance Cobo ton Switching times toff * Pulse test: tp = 300 ìs; d 0.02. Marking Marking 2 Testconditons Collector-base breakdown voltage FZT649 www.kexin.com.cn IC=50mA, VCE=2V* 70 200 IC=1A, VCE=2V* 100 200 IC=2A, VCE=2V* 75 150 IC=6A, VCE=2V* 15 50 IC=100mA, VCE=5V f=100MHz 150 240 VCB=10V, f=1MHz IC=500mA,VCC=10V,IB1=IB2=50mA 25 300 MHz 50 pF 55 ns 300 ns