Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT789A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features Low equivalent on-resistance; RCE(sat) 93mÙ at 3A. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Gain of 300 at IC=2 Amps and Very low saturation voltage. 4 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -25 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Continuous collector current ICM -6 A Peak pulse current IC -3 A Power dissipation Ptot 2 W Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FZT789A Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Breakdown Voltages V(BR)CBO IC=-100ìA -25 -40 V Breakdown Voltages * V(BR)CEO IC=-10mA -25 -35 V Breakdown Voltages V(BR)EBO IE=-100ìA -5 -8.5 Collector Cut-Off Current ICBO VCB=-15V VCB=-15V,Ta = 100 Emitter Cut-Off Current IEBO VEB=-4V ìA -0.1 ìA -0.15 -0.25 -0.30 -0.45 -0.30 -0.50 V V IC=-1A, IB=-10mA VCE(sat) IC=-2A, IB=-20mA IC=-3A, IB=-100mA Saturation Voltages * VBE(sat) IC=-1A, IB=-10mA -0.8 Base-Emitter Turn-On Voltage * VBE(on) IC=-1A, VCE=-2V -0.8 Transitional frequency hFE fT IC=-10mA, VCE=-2V 300 IC=-1A, VCE=-2V* 250 IC=-2A, VCE=-2V* 200 IC=-6A, VCE=-2V* 100 IC=-50mA, VCE=-5V, f=50MHz 100 V -0.1 10 Saturation Voltages * Static Forward Current Transfer Ratio -1.0 V 800 MHz Input capacitance Cibo VEB=-0.5V, f=1MHz 225 pF Output capacitance Cobo VCB=-10V, f=1MHz 25 pF Turn-on time t(on) IC=-500mA, VCC=-10V 35 ns Turn-off time t(off) IB1=IB2=-50mA 400 ns * Pulse test: tp = 300 ìs; d 0.02. Marking Marking 2 Testconditons FZT789A www.kexin.com.cn