KEXIN FZT951

Transistors
SMD Type
PNP Silicon Planar High Current Transistors
FZT951
SOT-223
+0.2
3.50-0.2
0.1max
+0.05
0.90-0.05
+0.2
6.50-0.2
5 Amps continuous current , up to 15 Amps peak current.
Very low saturation voltages.
+0.1
3.00-0.1
+0.15
1.65-0.15
Features
Unit: mm
+0.2
0.90-0.2
+0.3
7.00-0.3
Excellent gain characteristics specified up to 10 Amps.
4
Ptot = 3 watts.
FZT951 exhibts extremely low equivalent on resistance;
RCE(sat) 55mÙ at 4A.
1
1 base
3
2
+0.1
0.70-0.1
2.9
4.6
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-100
V
Collector-emitter voltage
VCEO
-60
V
Emitter-base voltage
VEBO
-6
V
Continuous collector current
ICM
-15
A
Peak pulse current
IC
-5
A
Power dissipation
Ptot
3
W
Tj,Tstg
-55 to +150
Operating and storage temperature range
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1
Transistors
SMD Type
FZT951
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100ìA
-100
-140
Collector-emitter breakdown voltage *
V(BR)CEO IC=-10mA
-60
-90
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100ìA
-6
-8
V
Collector Cut-Off Current
ICBO
VCB=-80V
VCB=-80V,Ta = 100
Emitter Cut-Off Current
IEBO
VEB=-6V
IC=-100mA, IB=-10mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-5A, IB=-500mA
Collector-emitter saturation voltage *
VCE(sat)
Base-emitter saturation voltage *
VBE(sat) IC=-5A, IB=-500mA
Base-emitter ON voltage *
VBE(on) IC=-5A, VCE=-1V
Static Forward Current Transfer Ratio*
Transitional frequency
hFE
fT
V
-50 1
nA
ìA
-10
nA
-50
-140
-210
-460
V
-1080 -1240
V
-935
V
-20
-85
-155
-137
IC=-10mA, VCE=-1V*
100
200
IC=-2A, VCE=-1V*
100
200
IC=-5A, VCE=-1V*
75
90
IC=-10A, VCE=-1V*
10
25
-1070
300
IC=-100mA, VCE=-10V, f=50MHz
120
MHz
Output capacitance
Cobo
VCB=-10V, f=1MHz
74
pF
Turn-on time
t(on)
IC=-2A, VCC=-10V
82
ns
Turn-off time
t(off)
IB1=IB2=-200mA
350
ns
* Pulse test: tp = 300 ìs; d
2
Testconditons
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0.02.