Transistors SMD Type PNP Transistors KST8550S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Collector current: IC-=0.5A +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.5 A Collector Power Dissipation PC 0.3 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-100 A, IE=0 -40 Collector-emitter breakdown voltage VCEO IC=-1mA, IB=0 -25 V Emitter-base breakdown voltage VEBO IE=-100 A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 Collector cut-off current ICEO Emitter cut-off current IEBO hFE DC current gain V -0.1 A VCE=-20V, IB=0 -0.1 A VEB=-3V, IC=0 -0.1 A VCE=-1V, IC=-50mA 120 VCE=-1V, IC=-500mA 50 350 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V Transition frequency fT VCE= -6V, IC= -20mA,f=30MHz 150 MHz hFE Classification 2TY Marking Rank L H hFE 120 200 200 350 www.kexin.com.cn 1 Transistors SMD Type KST8550S Typical Characteristics Fig.1 Static Characteristic Fig.3 Bacse-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 2 www.kexin.com.cn Fig.2 DC Current Gain Fig.4 Current Gain Bandwidth Product