IC Transistors SMD Type PNP Transistor KST9012 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Collector Current :IC=-0.5A +0.1 1.3-0.1 +0.1 2.4-0.1 Excellent hFE liearity 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 V Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 V Collector Current to Continuous IC -500 mA Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector - base breakdown voltage VCBO Ic= -100ìA, IE=0 -40 V Collector - emitter breakdown voltage VCEO IC= -1 mA , IB=0 -25 V Emitter - base breakdown voltage VEBO IE= -100ìA, IC=0 -5 V Collector cut - off current ICBO VCB=- 40V, IE=0 -0.1 A Collector cut - off current ICEO VCB=-20V, IE=0 -0.1 A Emitter cut - off current IEBO VEB=- 5V, IC=0 -0.1 A hFE VCE=-1V, IC= -50mA DC current gain 120 400 Collector - emitter saturation voltage VCE(sat) IC= -500 mA, IB= -50mA -0.6 V Base - emitter voltage VBE(sat) IC= -500 mA, IB=- 50mA -1.2 V Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz Transition frequency fT VCE=-6V, IC=-20mA,f=30MHz 5 150 pF MHz hFE Classification 2T1 Marking Rank hFE L 120 H 200 200 J 350 300 400 www.kexin.com.cn 1 IC Transistors SMD Type KST9012 Typical Characteristics Fig.1 Static Characteristic Fig.3 Base-Emitter Saturation Voltage Colletor- Emitter Saturation Voltage 2 www.kexin.com.cn Fig.2 DC Current Gain Fig.4 Current Gain Bandwidth Product