Transistors IC SMD Type NPN Transistor 2SC1815 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Power dissipation 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to Base Voltage Parameter VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current to Continuous IC 150 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 125 Storage Temperature Tstg -55 to 125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit 60 V 50 V Collector to base breakdown voltage VCBO Ic= 100 Collector to emitter breakdown voltage VCEO Ic= 0.1mA, IB=0 Collector cut to off current ICBO VCB=60V, IE=0 0.1 A Collector cut to off current ICEO VCE=50V, IB=0 0.1 A Emitter cut to off current IEBO VEB= 5V, IC=0 0.1 A hFE VCE= 6V, IC= 2mA DC current gain A, IE=0 130 400 Collector to emitter saturation voltage VCE(sat) IC=100 mA, IB= 10mA 0.25 V Base to emitter saturation voltage VBE(sat) IC=100 mA, IB= 10mA 1 V Transition frequency fT VCE=10V, IC= 1mA,f=30MHz 80 MHz hFE Classification HF Marking Rank hFE L 130 H 200 200 400 www.kexin.com.cn 1 Transistors IC SMD Type 2SC1815 Typlcal Characteristics Fig.1 Collector Emitter Voltage Fig.3 Collector Current Fig.5 Ambient Temperature 2 www.kexin.com.cn Fig.2 Collector Current Fig.4Collector Current Fig.6 Emitter Current