Transistors SMD Type NPN Epitaxial Silicon Transistor MJD340 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Load Formed for Surface Mount Application 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Straight Lead 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 3 V Collector Current (DC) IC 0.5 A Collector Current (Pulse) ICP 0.75 A 15 A 1.56 W W Collector Dissipation (TC = 25 ) PC Collector Dissipation (Ta = 25 ) Junction Temperature TJ 150 Storage Temperature TSTG -65 to 150 Electrical Characteristics Ta = 25 unless otherwise noted Parameter Collector-Emitter Sustaining Voltage * Symbol VCEO(sus) Testconditons IC = 1mA, IB = 0 Min Typ Max Unit 300 V Collector Cut-off Current ICEO VCB = 300V, IE =0 0.1 mA Emitter Cut-off Current IEBO VEB = 3V, IC = 0 0.1 mA DC Current Gain * hFE VCE = 10V, IC = 50mA *Pulse Test: PW 30 240 300ìs, Duty Cycle 2% www.kexin.com.cn 1