Transistors SMD Type Silicon NPN Epitaxial 2SC3072 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High DC current gain. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 High power dissipation. +0.15 0.50 -0.15 Low collector saturation voltage. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 8 V Collector current IC 5 A Collector current pulse * ICP 8 A IB 0.5 A 1.0 W 10 W Base current Collector power dissipation Ta = 25 PC Tc = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current Emitter cut-off current Testconditons ICBO VCB = 20 V, IE = 0 IEBO VEB = 8 V, IC = 0 V(BR)CEO IC = 10 mA, IB = 0 Collector-emitter breakdown voltage DC current gain hFE Collector-emitter saturation voltage Base-emitter voltage Max Unit 100 nA 100 nA 20 VCE = 2 V, IC = 0.5A 140 VCE = 2 V, IC = 4A 70 V 450 1.0 V VCE = 2 V, IC = 4 A 1.5 V fT Collector output capacitance Typ VCE (sat) IC = 4 A, IB = 0.1 A VBE Transition frequency Min Cob VCE = 2 V, IC = 0.5 A 100 MHz VCB = 10 V, IE = 0, f = 1 MHz 40 pF hFE Classification C3072 Marking Rank A B C hFE 140 240 200 330 300 450 www.kexin.com.cn 1