ONSEMI MJD340T4G

MJD340 (NPN)
MJD350 (PNP)
High Voltage Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for line operated audio output amplifier, switchmode
power supply drivers and other switching applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
(No Suffix)
Electrically Similar to Popular MJE340 and MJE350
300 V (Min) − VCEO(sus)
0.5 A Rated Collector Current
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
These are Pb−Free Packages
SILICON
POWER TRANSISTORS
0.5 AMPERE
300 VOLTS, 15 WATTS
4
1 2
3
DPAK
CASE 369C
STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
VCEO
300
Vdc
Collector−Base Voltage
VCB
300
Vdc
Emitter−Base Voltage
VEB
3
Vdc
IC
0.5
0.75
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
15
0.12
W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
1.56
0.012
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to +150
°C
Collector−Emitter Voltage
Collector Current
− Continuous
− Peak
AYWW
J3x0G
A
Y
WW
J3x0
G
=
=
=
=
Assembly Location
Year
Work Week
Device Code
x= 4 or 5
= Pb−Free Package
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
8.33
°C/W
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA
80
°C/W
Leading Temperature for Soldering Purpose
TL
260
°C
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 8
1
Publication Order Number:
MJD340/D
MJD340 (NPN) MJD350 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
300
−
V
Collector Cutoff Current
(VCB = 300 V, IE = 0)
ICEO
−
0.1
mA
Emitter Cutoff Current
(VBE = 3 V, IC = 0)
IEBO
−
0.1
mA
hFE
30
240
−
Collector−Emitter Saturation Voltage
(IC = 100 mA, IB = 10 mA)
VCE(sat)
−
1
V
Base−Emitter On Voltage
(IC = 1 A, VCE = 10 V)
VBE(on)
−
1.5
V
fT
10
−
MHz
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 1 mA, IB = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 50 mA, VCE = 10 V)
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 50 mA, VCE = 10 V, f = 10 MHz)
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
TYPICAL CHARACTERISTICS
MJD340
300
VCE = 2 V
VCE = 10 V
hFE , DC CURRENT GAIN
200
TJ = 150°C
100
70
+100°C
50
+25°C
30
20
10
-55°C
1
2
3
5
7
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
Figure 1. DC Current Gain
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2
70
100
200
300
500
MJD340 (NPN) MJD350 (PNP)
MJD340
1
V, VOLTAGE (VOLTS)
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 10 V
0.4
VCE(sat) @ IC/IB = 10
0.2
IC/IB = 5
0
10
20
30
50
100
200 300
IC, COLLECTOR CURRENT (mA)
500
Figure 2. “On” Voltages
MJD350
1
200
1
TJ = 150°C
TJ = 25°C
0.8
V, VOLTAGE (VOLTS)
25°C
100
hFE , DC CURRENT GAIN
MJD350
70
-55°C
50
30
20
VCE = 2 V
VCC = 10 V
7
10
0.6
VBE @ VCE = 10 V
0.4
IC/IB = 10
0.2
VCE(sat)
10
5
VBE(sat) @ IC/IB = 10
20 30
200 300
50 70 100
IC, COLLECTOR CURRENT (mA)
0
500
5
7
10
Figure 3. DC Current Gain
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.7
0.5
0.3
0.2
0.1
0.03
0.02
0.01
0.01
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
200 300 500
Figure 4. “On” Voltages
D = 0.5
0.2
0.1
0.07
0.05
IC/IB = 5
RqJC(t) = r(t) RqJC
RqJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.05
0.01
SINGLE PULSE
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
Figure 5. Thermal Response
http://onsemi.com
3
20
30
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1k
MJD340 (NPN) MJD350 (PNP)
1000
IC, COLLECTOR CURRENT (mA)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 ms
500
300
200
500 ms
1 ms
100
50
30
20
dc
10
5
3
2
1
10
20 30
50 70 100
200 300
500 700 1000
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Active Region Safe Operating Area
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
2 20
1.5 15
TA
TC
1 10
0.5
5
0
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 7. Power Derating
ORDERING INFORMATION
Package
Shipping†
MJD340G
DPAK
(Pb−Free)
75 Units / Rail
MJD340RLG
DPAK
(Pb−Free)
1800 / Tape & Reel
MJD340T4G
DPAK
(Pb−Free)
2500 / Tape & Reel
MJD350G
DPAK
(Pb−Free)
75 Units / Rail
MJD350T4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
MJD340 (NPN) MJD350 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MJD340/D