Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1001 Features World standard miniature package:SOT-89. High collector-emitter voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 300 mA Collector Current (pulse) * IC 500 mA Total power dissipation PT 2.0 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pulse Test PW 10ms, Duty Cycle 50%. Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 80 V, IE = 0 A Testconditons 100 nA Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 A 100 nA DC current gain * hFE VCE = 1.0 V, IC = 50 mA 90 200 30 80 VCE(sat) IC = 300 mA, IB = 30 mA Base saturation voltage * VBE(sat) IC = 300 mA, IB = 30 mA Gain bandwidth product Output capacitance * Pulsed: PW 0.15 400 0.6 V 0.86 1.2 V 645 700 mV VBE VCE = 6.0 V, IC = 10 mA fT VCE = 6.0 V, IE = -10 mA 140 MHz VCB = 6 V, IE = 0, f = 1.0 MHz 70 pF Cob 350 ìs, duty cycle Typ VCE = 2.0 V, IC = 300 mA Collector saturation voltage * Base-emitter voltage * Min 600 2% hFE Classification Marking EM EL EK hFE 90 180 135 270 200 400 www.kexin.com.cn 1