ETC PNA1401

Phototransistors
PNA1401
Silicon NPN Phototransistor
Unit : mm
ø4.6±0.15
Glass lens
6.3±0.3
For optical control systems
Features
12.7 min.
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LED’s
Low dark current : ICEO = 5 nA (typ.)
2-ø0.45±0.05
Fast response : tr, tf = 3 µs (typ.)
2.54±0.25
0
0±
1.
TO-18 standard type package
1.
3˚
0±
0
45±
.1
5
.2
Absolute Maximum Ratings (Ta = 25˚C)
2 1
Parameter
Symbol
Ratings
Unit
Collector to emitter voltage
VCEO
30
V
Emitter to collector voltage
VECO
5
V
IC
50
mA
Collector current
Collector power dissipation
PC
150
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
1: Emitter
2: Collector
ø5.75 max.
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Dark current
ICEO
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
ICE(L)
Conditions
min
VCE = 10V
Unit
300
nA
3.5
mA
VCE = 10V
800
nm
θ
Measured from the optical axis to the half power point
10
deg.
tr, tf*2
VCC = 10V, ICE(L) = 5mA, RL = 100Ω
3
µs
ICE(L) = 1mA, L = 500
1.5
max
5
λP
VCE(sat)
VCE = 10V, L = 100
lx*1
typ
lx*1
0.2
0.4
V
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
,,,,
,,
50Ω
90%
10%
td
tr
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
PNA1401
Phototransistors
PC — Ta
10 2
20
120
80
40
ICE(L) (mA)
16
400 lx PC = 150mW
300 lx
12
VCE = 10V
Ta = 25˚C
Ta = 25˚C
500 lx
Collector photo current
ICE(L) (mA)
160
Collector photo current
PC (mW)
1000 lx
Collector power dissipation
ICE(L) — L
ICE(L) — VCE
200
200 lx
8
150 lx
100 lx
4
10
1
10 –1
L = 50 lx
0
– 20
0
20
40
60
Ambient temperature
80
0
100
Ta (˚C )
0
10
VCE = 10V
T = 2856K
1
0
40
80
Ambient temperature
S (%)
200 lx
100 lx
Ta (˚C )
80
120
VCC = 10V
Ta = 25˚C
80
tr (µs)
10 2
60
40
RL = 1kΩ
500Ω
10
100Ω
1
20
0
30
20
10
Angle
2
0
10
θ (deg.)
20
30
60
40
10 –1
10 –1
1
Collector photo current
10
0
200
400
600
800
1000
Wavelength λ (nm)
Ta (˚C )
10 3
Rise time
S (%)
40
tr — ICE(L)
Directivity characteristics
Relative sensitivity
0
Ambient temperature
100
80
20
1
– 40
120
10 3
Ta = 25˚C
L = 500 lx
10
10 2
L (lx)
Spectral sensitivity characteristics
Relative sensitivity
10
10
Illuminance
100
ICE(L) (mA)
Collector photo current
ICEO (nA)
Dark current
10 2
1
VCE (V)
ICE(L) — Ta
10 2
VCE = 10V
10 –1
– 40
10 –2
30
Collector to emitter voltage
ICEO — Ta
10 3
20
10 2
ICE(L) (mA)
1200