Photo transistors KODENSHI KOREA CORP ST-1MLAR2. ST-1MLBR2 The ST-1MLAR2 and 1MLBR2 is a high sensitivity [Unit : mm] Dimensions NPN silicon phototransistor mounted in a TO-18 Type header with black epoxy encapsulation. With daylight filter the phototransistor is sensitive only to infrared rays. Features ㆍWide angular response ㆍRelatively low-cost against metal can package ② ㆍLow profile package ㆍWith daylight filter ① ③ Applications ㆍRemote control sensors ㆍCard readers ㆍOptical switches [TA = 25℃] Absolute Maximum Ratings Parameter Symbol Rating Unit C-E Voltage VCEO 40 V E-C Voltage VECO 4 V Collector current IC 30 mA Collector power dissipation PC 100 mW Operating temp Topr. -25~+90 ℃ Storage temp Tstg. -30~+100 ℃ Soldering temp *1 Tsol 260 ℃ *1. For MAX.5 seconds at the position of 2mm from the package [TA = 25℃] Electro-Optical Characteristics Parameter Collector dark current Conditions ICEO VCEO=10V Min. Typ. Max. Unit. - 1 200 nA *2 0.5 1.2 5.0 mA VCE(sat) *2 IC=2mA, 2,000lx - 0.2 0.4 V Rise time tr 8 - μsec tf VCC=10V, IC=5mA RL=100Ω - Fall time - 10 - μsec IL Light current C-E saturation voltage Switching speeds Symbol VCE=10V, 200lx Spectral sensitivity λ 720 ~ 1,050 Peak wavelength λp - 940 - nm Half Angle ΔΘ - ±70 - degrees *2. Color temp = 2856K standard tungsten lamp -1- nm Photo transistors KODENSHI KOREA CORP ST-1MLAR2. ST-1MLBR2 -2-