LESHAN RADIO COMPANY, LTD. Silicon PNP Epitaxial Planer Transistor L4401DW1T1 SC88 MAXIMUM RATINGS Parameter Symbol Ratings Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6 V IC -150 mAdc Symbol Max Collector current-continuoun THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) o TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Unit PD R JA Tj ,Tstg 380 mW 328 o -55 to +150 C/W o C DEVICE MARKING L4401DW1T1=5K ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO -50 - - V V(BR)EBO -6 - - V V(BR)CBO -60 - - V OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage (IE=-50 A) Collector-Base Breakdown Voltage (IC=-50 A) L4401DW1T1-1/2 LESHAN RADIO COMPANY, LTD. Collector Cutoff Current (VCB=-60V) ICBO Emitter Cutoff Current (VBE=-6V) IEBO - - -0.1 A -0.1 A ON CHARACTERISTICS DC Current Gain (IC=-1mA, VCE=-6.0V) Collector-Emitter Saturation Voltage (IC=-50mA,IB=-5mA) Hfe 120 - 560 VCE(SAT) - - -0.5 V Ft - 140 - MHz Cobo - 4 5 Pf SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (VCE = -12.0V; IE =2.0 mA,f=300MHZ) Output Capacitance(VCB=-12V,f=1.0MHz) PACKAGE DIMENSIONS SC-88 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K N S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC ––– 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65BSC ––– 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 L4401DW1T1-2/2